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BDY71 PDF预览

BDY71

更新时间: 2024-11-05 08:52:07
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管局域网
页数 文件大小 规格书
2页 150K
描述
isc Silicon NPN Power Transistor

BDY71 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.56
Is Samacsys:NBase Number Matches:1

BDY71 数据手册

 浏览型号BDY71的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
BDY71  
DESCRIPTION  
·Continuous Collector Current-IC= 4A  
·Collector Power Dissipation-  
: PC= 29W @TC= 25℃  
APPLICATIONS  
·Designed for general purpose switching and amplifier  
applications.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEX  
VCER  
VCEO  
VEBO  
IC  
PARAMETER  
VALUE  
UNIT  
V
Collector-Base Voltage  
90  
Collector-Emitter Voltage VBE= -1.5V  
Collector-Emitter Voltage RBE= 100Ω  
Collector-Emitter Voltage  
90  
V
60  
V
55  
V
Emitter-Base Voltage  
7
V
Collector Current-Continuous  
Base Current-Continuous  
4
2
A
IB  
A
PC  
Collector Power Dissipation@TC=25℃  
Junction Temperature  
29  
W
TJ  
200  
-65~200  
Storage Temperature  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Thermal Resistance,Junction to Case  
6.0  
/W  
Rth j-c  
isc Websitewww.iscsemi.cn  

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