Datasheet > BDY83

BDY83

更新时间： 2024-01-20 17:28:40

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	235K
描述
Silicon PNP Power Transistor

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中文翻译

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数据手册

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BDY83 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistor

BDY83

DESCRIPTION

·Continuous Collector Current-I_C= -4A

·Collector Power Dissipation-

: P_C= 36W @T_C= 25℃

·Complement to Type BDY81

APPLICATIONS

·Designed for general purpose switching and amplifier

applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEX

V_CEO

V_EBO

I_C

PARAMETER

VALUE

-50

UNIT

Collector-Base Voltage

Collector-Emitter Voltage V_BE= +1.5V

Collector-Emitter Voltage

Emitter-Base Voltage

-50

-10

Collector Current-Continuous

Base Current-Continuous

Collector Power Dissipation@T_C=25℃

Junction Temperature

-4

I_B

-2

P_C

℃

T_J

150

-55~175

Storage Temperature

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance,Junction to Case

3.5

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

中文翻译

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