Datasheet > BDX16

BDX16

更新时间： 2024-09-14 06:41:59

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	276K
描述
Silicon PNP Power Transistor

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BDX16 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistor

BDX16

DESCRIPTION

·Contunuous Collector Current-I_C= -3A

·Collector Power Dissipation-

: P_C= 25W @T_C= 25℃

Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= -140V(Min)

APPLICATIONS

·Designed for use in general purpose switching and linear

amplifier applications requiring high breakdown voltages.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CER

V_CEO

V_EBO

I_C

PARAMETER

VALUE

-160

-150

-140

-7

UNIT

Collector-Base Voltage

Collector-Emitter Voltage R_BE= 100Ω

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

Collector Current-Peak

-3

I_CM

-4

I_B

Base Current-Continuous

Collector Power Dissipation@T_C=25℃

Junction Temperature

-2

P_C

℃

T_J

200

-65~200

Storage Temperature

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance,Junction to Case

7.0

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

中文翻译

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