Datasheet > BDX18_12

BDX18_12

更新时间： 2024-11-04 12:53:11

品牌	Logo	应用领域
COMSET		晶体晶体管
页数	文件大小	规格书
3页	79K
描述
PNP SILICON TRANSISTOR EPITAXIAL BASE

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中文翻译

获取价格

数据手册

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BDX18_12 数据手册

BDX18 – BDX18N

PNP SILICON TRANSISTOR EPITAXIAL BASE

LF Large Signal Power Amplification

High Current Switching

Thermal Fatigue Inspection

Compliance to RoHS

Applications :

•

Series and shunt regulators

High Fidelity Amplifiers

Power-switching circuits

Solenoid drivers

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

BDX18

BDX18N

BDX18

BDX18N

BDX18

BDX18N

BDX18

BDX18N

BDX18

BDX18N

BDX18

BDX18N

BDX18

BDX18N

V_CEO

V_CER

V_EBO

V_CBO

V_CEX

I_C

Collector-Emitter Voltage

-60

-70

-65

Collector-Emitter

Voltage

R_BE=100Ω

Collector-Emitter Voltage

Emitter-Base Voltage

-7

-100

-70

-90

-70

Collector-Emitter

Voltage

V_BE=+1.5 V

Collector Current

Base Current

-15

I_B

-7

P_T

T_J

Power Dissipation

@ T_C= 25°

117

Junction Temperature

-65 to +200

°C

T_S

Storage Temperature

05/10/2012

COMSET SEMICONDUCTORS

1 | 3

12 3

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与BDX18_12相关器件

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BDX18A	SEME-LAB	获取价格	Bipolar PNP Device in a Hermetically sealed TO3
BDX18N	SEME-LAB	获取价格	Bipolar PNP Device in a Hermetically sealed TO3
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