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BDX20_12 PDF预览

BDX20_12

更新时间: 2024-11-04 12:53:11
品牌 Logo 应用领域
COMSET 晶体晶体管
页数 文件大小 规格书
3页 75K
描述
SILICON TRANSISTORS EPITAXIAL BASE

BDX20_12 数据手册

 浏览型号BDX20_12的Datasheet PDF文件第2页浏览型号BDX20_12的Datasheet PDF文件第3页 
PNP BDX20  
SILICON TRANSISTORS EPITAXIAL BASE  
The BDX20 are mounted in TO-3 metal package.  
LF Large Signal Power Amplification  
High Current Fast Switching  
Thermal Fatigue Inspection  
Compliance to RoHS.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Ratings  
Value  
Unit  
VCBO  
VCEO  
VCEX  
VEBO  
IC  
IB  
PTOT  
TJ  
Collector to Base Voltage  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current – Continuous  
Base Current – Continuous  
Total Device Dissipation  
Junction Temperature  
-60  
-140  
-160  
-7  
-10  
-7  
V
V
V
V
A
VBE=1.5 V  
A
117  
200  
-65 to +200  
W
°C  
°C  
TS  
Storage Temperature  
THERMAL CHARACTERISTICS  
Symbol  
RthJC  
Ratings  
Value  
Unit  
Thermal Resistance, Junction to Case  
1.5  
°C/W  
08/11/2012  
COMSET SEMICONDUCTORS  
1 | 3  

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