Datasheet > BDX20_12

BDX20_12

更新时间： 2024-11-04 12:53:11

品牌	Logo	应用领域
COMSET		晶体晶体管
页数	文件大小	规格书
3页	75K
描述
SILICON TRANSISTORS EPITAXIAL BASE

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中文翻译

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数据手册

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BDX20_12 数据手册

PNP BDX20

SILICON TRANSISTORS EPITAXIAL BASE

The BDX20 are mounted in TO-3 metal package.

LF Large Signal Power Amplification

High Current Fast Switching

Thermal Fatigue Inspection

Compliance to RoHS.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

V_CBO

V_CEO

V_CEX

V_EBO

I_C

I_B

P_TOT

T_J

Collector to Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current – Continuous

Base Current – Continuous

Total Device Dissipation

Junction Temperature

-60

-140

-160

-7

-10

-7

V_BE=1.5 V

117

200

-65 to +200

°C

T_S

Storage Temperature

THERMAL CHARACTERISTICS

Symbol

R_thJC

Ratings

Value

Unit

Thermal Resistance, Junction to Case

1.5

°C/W

08/11/2012

COMSET SEMICONDUCTORS

1 | 3

12 3

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