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BDX33_12 PDF预览

BDX33_12

更新时间: 2024-11-04 12:31:07
品牌 Logo 应用领域
COMSET 晶体晶体管达林顿晶体管
页数 文件大小 规格书
4页 106K
描述
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

BDX33_12 数据手册

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NPN BDX33 – BDX33A – BDX33B – BDX33C  
COMPLEMENTARY SILICON POWER DARLINGTON  
TRANSISTORS  
The BDX33B, BDX33B and BDX33C are silicon epitaxial-base NPN power transistors in  
monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package.  
They are intented for use in power linear and switching applications.  
The complementary PNP types are the BDX34A, BDX34B and BDX34C respectively.  
Compliance to RoHS.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCEO  
Ratings  
Value  
Unit  
BDX33  
45  
60  
80  
100  
45  
BDX33A  
BDX33B  
BDX33C  
BDX33  
Collector-Emitter Voltage IB=0  
V
BDX33A  
BDX33B  
BDX33C  
60  
80  
100  
10  
15  
VCBO  
Collector-Base Voltage  
Collector Current  
IE=0  
V
A
IC(RMS)  
ICM  
IC  
IB  
Base Current  
0.25  
70  
A
W
PT  
TJ  
TS  
Power Dissipation  
Junction Temperature  
Storage Temperature  
@ TC = 25°  
-65 to +150  
°C  
THERMAL CHARACTERISTICS  
Symbol  
RthJ-C  
Ratings  
Value  
Unit  
Thermal Resistance, Junction to Case  
1.78  
°C/W  
23/10/2012  
COMSET SEMICONDUCTORS  
1/4  

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