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BDX33A PDF预览

BDX33A

更新时间: 2024-09-15 22:27:27
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关
页数 文件大小 规格书
5页 42K
描述
Power Linear and Switching Applications

BDX33A 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SFM包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.42
最大集电极电流 (IC):10 A集电极-发射极最大电压:60 V
配置:DARLINGTON WITH BUILT-IN DIODE最小直流电流增益 (hFE):750
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):70 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):3 MHz

BDX33A 数据手册

 浏览型号BDX33A的Datasheet PDF文件第2页浏览型号BDX33A的Datasheet PDF文件第3页浏览型号BDX33A的Datasheet PDF文件第4页浏览型号BDX33A的Datasheet PDF文件第5页 
BDX33/A/B/C  
Power Linear and Switching Applications  
High Gain General Purpose  
Power Darlington TR  
Complement to BDX34/34A/34B/34C respectively  
TO-220  
1.Base 2.Collector 3.Emitter  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector Current (DC)  
CBO  
: BDX33  
45  
60  
80  
V
V
V
V
: BDX33A  
: BDX33B  
: BDX33C  
100  
V
CEO  
: BDX33  
45  
60  
80  
V
V
V
V
: BDX33A  
: BDX33B  
: BDX33C  
100  
I
I
I
10  
15  
A
A
C
*Collector Current (Pulse)  
Base Current  
CP  
B
0.25  
A
P
Collector Dissipation (T =25°C)  
70  
W
°C  
°C  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 65 ~ 150  
STG  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

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