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BDX33A-BP-HF

更新时间： 2024-09-16 19:28:35
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
4页 906K
描述
Power Bipolar Transistor,

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中文翻译

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BDX33A-BP-HF 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：,Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.63
湿度敏感等级：1Base Number Matches：1

BDX33A-BP-HF 数据手册

 浏览型号BDX33A-BP-HF的Datasheet PDF文件第2页浏览型号BDX33A-BP-HF的Datasheet PDF文件第3页浏览型号BDX33A-BP-HF的Datasheet PDF文件第4页 
M C C  
BDX33  
THRU  
BDX33D  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
·
Halogen free available upon request by adding suffix "-HF"  
•
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates  
RoHS Compliant. See ordering information)  
Designed For Complementary Use with BDX34, BDX34A, BDX34B,  
BDX34C and BDX34D  
70W at 25 Cass Temperature  
10A Continuous Collector Current  
NPN Silicon  
Power Darlingtons  
•
•
•
•
·
Minimum hFE of 750 at 3.0V, 3.0A  
Epoxy meets UL 94 V-0 flammability rating  
·
Moisure Sensitivity Level 1  
•
TO-220  
Mounting Torgue: 5 in-lbs Maximum  
°
Symbol  
Rating  
Collector-Base Voltage (IE=0)  
BDX33  
Value  
Unit  
C
B
S
F
VCBO  
45  
60  
80  
BDX33A  
BDX33B  
Q
V
T
BDX33C  
BDX33D  
Collector-Emitter Voltage (IB=0)  
BDX33  
BDX33A  
BDX33B  
BDX33C  
BDX33D  
Emitter-Base Voltage  
Continuous Collector Current  
Continuous Base Current  
Continuous Device Dissipation at (or below) 25  
Case Temperature (see Note2)  
Continuous Device Dissipation at (or below) 25  
Free Air Temperature (see Note 3)  
Operating Free Air Temperature Range  
100  
100  
A
U
VCEO  
45  
60  
80  
100  
100  
5.0  
10  
0.3  
70  
1
2
3
V
H
K
VEBO  
IC  
IB  
V
A
A
PTOT  
W
V
L
J
PTOT  
2.0  
W
D
R
G
PIN 1.  
PIN 2.  
PIN 3.  
BASE  
COLLECTOR  
EMITTER  
TJ  
TSTG  
TA  
-55~+150  
-55~+150  
-55~+150  
N
Storage Temperature Range  
Operating Free-Air Temperature Range  
DIMENSIONS  
INCHES  
MM  
Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex 7.  
MIN  
14.22  
9.65  
MAX  
15.88  
10.67  
NOTE  
DIM  
A
MIN  
MAX  
.625  
2. Derate Linearly to 150 Case Temperature at the Rate of 0.56 W/  
3. Derate Linearly to 150 Free Air Temperature at the Rate of 16m W/  
.560  
.380  
.140  
B
C
.420  
.190  
3.56  
4.82  
D
F
.020  
.139  
.190  
---  
.045  
.161  
.110  
.250  
.025  
0.51  
3.53  
2.29  
---  
1.14  
4.09  
2.79  
6.35  
0.64  
°
Symbol  
Parameter  
Collector-Emitter Breakdown  
Voltage  
Min  
Typ  
Max  
Unit  
G
H
J
.012  
0.30  
K
L
.500  
.045  
.580  
.060  
12.70  
1.14  
14.73  
1.52  
V(BR)CEO  
(IC=100mA, IB=0,see note 3)  
BDX33  
BDX33A  
BDX33B  
BDX33C  
45  
60  
80  
100  
100  
V
N
.190  
.210  
4.83  
5.33  
Q
R
S
T
U
V
.100  
.080  
.045  
.230  
-----  
.135  
.115  
.055  
.270  
.050  
-----  
2.54  
2.04  
1.14  
5.84  
-----  
3.43  
2.92  
1.39  
6.86  
1.27  
-----  
BDX33D  
.045  
1.15  
www.mccsemi.com  
Revision: C  
2013/01/01  
1 of 4  
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中文翻译

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BDX33A-DR6260 RENESAS

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BDX33A-DR6269 RENESAS

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BDX33A-DR6274 RENESAS

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 		Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BDX33A-DR6280 RENESAS

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 		10A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB
BDX33AJ69Z FAIRCHILD

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 		Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BDX33AL MOTOROLA

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 		Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BDX33AN MOTOROLA

获取价格

 		Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast

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