Datasheet > BDX33B

BDX33B

更新时间： 2024-11-29 06:41:59

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管开关局域网
页数	文件大小	规格书
3页	122K
描述
Silicon NPN Power Transistors

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中文翻译

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数据手册

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BDX33B 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

BDX33/A/B/C

DESCRIPTION

·With TO-220C package

·High DC current gain

·DARLINGTON

·Complement to type BDX34/A/B/C

APPLICATIONS

·For power linear and switching

applications

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Emitter

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

BDX33

BDX33A

BDX33B

BDX33C

BDX33

V_CBO

Collector-base voltage

Open emitter

100

BDX33A

BDX33B

BDX33C

V_CEO

Collector-emitter voltage

Open base

100

V_EBO

I_C

I_CM

I_B

Emitter-base voltage

Collector current-DC

Collector current-Pulse

Base current

Open collector

0.25

P_C

T_j

Collector power dissipation

Junction temperature

Storage temperature

T_C=25℃

℃

150

-65~150

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Thermal resistance junction to case

MAX

UNIT

R_{th j-c}

1.78

℃/W

12 3

中文翻译

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与BDX33B相关器件

型号	品牌	获取价格	描述	数据表
BDX33B/D	ETC	获取价格	Darlington Complementary Silicon Power Transistors
BDX33B_06	ONSEMI	获取价格	Darlington Complementary Silicon Power Transistors
BDX33B_07	ONSEMI	获取价格	Darlington Complementary Silicon Power Transistors
BDX33B16	MOTOROLA	获取价格	10A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB
BDX33B16A	MOTOROLA	获取价格	Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BDX33B-6200	RENESAS	获取价格	10A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB
BDX33B-6203	RENESAS	获取价格	Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BDX33B-6226	RENESAS	获取价格	10A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB
BDX33B-6255	RENESAS	获取价格	Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BDX33B-6258	RENESAS	获取价格	Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast