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BDX33B_07

更新时间： 2024-09-16 08:52:03
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
6页 89K
描述
Darlington Complementary Silicon Power Transistors

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中文翻译

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BDX33B_07 数据手册

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BDX33B, BDX33C* (NPN)  
BDX34B, BDX34C* (PNP)  
BDX33C and BDX34C are Preferred Devices  
Darlington Complementary  
Silicon Power Transistors  
These devices are designed for general purpose and low speed  
switching applications.  
http://onsemi.com  
Features  
DARLINGTON  
10 AMPERE  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
80-100 VOLTS, 65 WATTS  
•ꢀHigh DC Current Gain - h = 2500 (typ.) at I = 4.0  
FE  
C
•ꢀCollector-Emitter Sustaining Voltage at 100 mAdc  
CEO(sus)  
V
= 80 Vdc (min) - BDX33B, BDX334B  
= 100 Vdc (min) - BDX33C, BDX334C  
•ꢀLow Collector-Emitter Saturation Voltage  
= 2.5 Vdc (max) at I = 3.0 Adc  
V
CE(sat)  
C
- BDX33B, 33C/34B, 34C  
•ꢀMonolithic Construction with Build-In Base-Emitter Shunt Resistors  
•ꢀPb-Free Packages are Available*  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
TO-220AB  
CASE 221A-09  
STYLE 1  
Collector-Emitter Voltage  
V
CEO  
Vdc  
1
BDX33B, BDX34B  
BDX33C, BDX34C  
80  
100  
2
3
Collector-Base Voltage  
V
CB  
Vdc  
BDX33B, BDX34B  
BDX33C, BDX34C  
80  
100  
MARKING DIAGRAM  
Emitter-Base Voltage  
V
5.0  
Vdc  
Adc  
EB  
Collector Current - Continuous  
- Peak  
I
10  
15  
C
Base Current  
I
B
0.25  
Adc  
Total Device Dissipation @ T = 25°C  
P
70  
0.56  
W
W/°C  
BDX3xyG  
AY WW  
C
D
Derate above 25°C  
Operating and Storage Junction  
Temperature Range  
T , T  
J
ꢁ65 to +150  
°C  
stg  
THERMAL CHARACTERISTICS  
Characteristics  
Symbol  
Max  
Unit  
BDX3xy = Device Code  
x = 3 or 4  
y = B or C  
Thermal Resistance, Junction-to-Case  
R
q
JC  
1.78  
°C/W  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
A
=
=
=
=
Assembly Location  
Year  
Work Week  
Y
WW  
G
Pb-Free Package  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
*For additional information on our Pb-Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©ꢀ Semiconductor Components Industries, LLC, 2007  
November, 2007 - Rev. 12  
1
Publication Order Number:  
BDX33B/D  
123456

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 		Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BDX33B-6261 RENESAS

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 		Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BDX33B-6263 RENESAS

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 		10A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB
BDX33B-6264 RENESAS

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 		Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast

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