Datasheet > BDX33B_06

BDX33B_06

更新时间： 2024-09-16 03:21:39

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
6页	74K
描述
Darlington Complementary Silicon Power Transistors

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中文翻译

获取价格

数据手册

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BDX33B_06 数据手册

BDX33B, BDX33C* (NPN)

BDX34B, BDX34C* (PNP)

BDX33C and BDX34C are Preferred Devices

Darlington Complementary

Silicon Power Transistors

These devices are designed for general purpose and low speed

switching applications.

http://onsemi.com

Features

DARLINGTON

10 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

80−100 VOLTS, 65 WATTS

• High DC Current Gain − h = 2500 (typ.) at I = 4.0

• Collector−Emitter Sustaining Voltage at 100 mAdc

= 80 Vdc (min) − BDX33B, BDX334B

= 100 Vdc (min) − BDX33C, BDX334C

CEO(sus)

• Low Collector−Emitter Saturation Voltage

= 2.5 Vdc (max) at I = 3.0 Adc

CE(sat)

− BDX33B, 33C/34B, 34C

• Monolithic Construction with Build−In Base−Emitter Shunt Resistors

• Pb−Free Packages are Available*

MAXIMUM RATINGS

TO−220AB

Rating

Symbol

Value

Unit

CASE 221A−09

Collector−Emitter Voltage

Vdc

CEO

STYLE 1

BDX33B, BDX34B

BDX33C, BDX34C

100

Collector−Base Voltage

Vdc

BDX33B, BDX34B

BDX33C, BDX34C

100

MARKING DIAGRAM

Emitter−Base Voltage

5.0

Vdc

Adc

Collector Current − Continuous

− Peak

Base Current

0.25

Adc

BDX3xyG

AY WW

Total Device Dissipation @ T = 25_C

0.56

W/_C

Derate above 25°C

Operating and Storage Junction

Temperature Range

T , T

−65 to +150

stg

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

1.78

_C/W

BDX3xy = Device Code

x = 3 or 4

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

y = B or C

= Assembly Location

= Year

= Work Week

= Pb−Free Package

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

February, 2006 − Rev. 11

BDX33B/D

12 3 4 5 6

中文翻译

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与BDX33B_06相关器件

型号	品牌	获取价格	描述	数据表
BDX33B_07	ONSEMI	获取价格	Darlington Complementary Silicon Power Transistors
BDX33B16	MOTOROLA	获取价格	10A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB
BDX33B16A	MOTOROLA	获取价格	Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BDX33B-6200	RENESAS	获取价格	10A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB
BDX33B-6203	RENESAS	获取价格	Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BDX33B-6226	RENESAS	获取价格	10A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB
BDX33B-6255	RENESAS	获取价格	Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BDX33B-6258	RENESAS	获取价格	Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BDX33B-6261	RENESAS	获取价格	Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BDX33B-6263	RENESAS	获取价格	10A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB

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