Datasheet > BDX33B/D

BDX33B/D

更新时间： 2024-11-03 23:35:11

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
8页	61K
描述
Darlington Complementary Silicon Power Transistors

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数据手册

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BDX33B/D 数据手册

ON Semiconductort

NPN

Darlington Complementary

Silicon Power Transistors

BDX33B

BDX33C

. . . designed for general purpose and low speed switching

applications.

PNP

BDX34B

• High DC Current Gain —

= 2500 (typ.) at I = 4.0

• Collector–Emitter Sustaining Voltage at 100 mAdc

= 80 Vdc (min.) — BDX33B, 34B

BDX34C

*ON Semiconductor Preferred Device

CEO(sus)

100 Vdc (min.) — BDX33C, 34C

• Low Collector–Emitter Saturation Voltage

DARLINGTON

10 AMPERE

CE(sat)

= 2.5 Vdc (max.) at I = 3.0 Adc — BDX33B,

COMPLEMENTARY

SILICON

POWER TRANSISTORS

80–100 VOLTS

70 WATTS

33C/34B, 34C

• Monolithic Construction with Build–In Base–Emitter Shunt resistors

• TO–220AB Compact Package

MAXIMUM RATINGS

BDX33B

BDX34B

BDX33C

BDX34C

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

Unit

Vdc

Adc

CEO

100

5.0

Collector Current — Continuous

Peak

Base Current

0.25

Adc

Total Device Dissipation

CASE 221A–09

TO–220AB

@ T = 25_C

0.56

Watts

W/_C

Derate above 25_C

Operating and Storage Junction

Temperature Range

T , T

–65 to +150

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

1.78

_C/W

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

March, 2001 – Rev. 9

BDX33B/D

12 3 4 5 6 7 8

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与BDX33B/D相关器件

型号	品牌	获取价格	描述	数据表
BDX33B_06	ONSEMI	获取价格	Darlington Complementary Silicon Power Transistors
BDX33B_07	ONSEMI	获取价格	Darlington Complementary Silicon Power Transistors
BDX33B16	MOTOROLA	获取价格	10A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB
BDX33B16A	MOTOROLA	获取价格	Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BDX33B-6200	RENESAS	获取价格	10A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB
BDX33B-6203	RENESAS	获取价格	Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BDX33B-6226	RENESAS	获取价格	10A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB
BDX33B-6255	RENESAS	获取价格	Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BDX33B-6258	RENESAS	获取价格	Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BDX33B-6261	RENESAS	获取价格	Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast