BDX33B

更新时间： 2024-11-03 22:39:31

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管开关局域网
页数	文件大小	规格书
6页	138K
描述
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

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数据手册
替代型号

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BDX33B 数据手册

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by BDX33B/D

SEMICONDUCTOR TECHNICAL DATA

. . . designed for general purpose and low speed switching applications.

•

High DC Current Gain — h = 2500 (typ.) at I = 4.0

FE C

Collector–Emitter Sustaining Voltage at 100 mAdc

= 80 Vdc (min.) — BDX33B, 34B

= 100 Vdc (min.) — BDX33C, 34C

CEO(sus)

•

Low Collector–Emitter Saturation Voltage

= 2.5 Vdc (max.) at I = 3.0 Adc — BDX33B, 33C/34B, 34C

Monolithic Construction with Build–In Base–Emitter Shunt resistors

TO–220AB Compact Package

*Motorola Preferred Device

CE(sat)

•

DARLINGTON

10 AMPERE

COMPLEMENTARY

SILICON

MAXIMUM RATINGS

POWER TRANSISTORS

80–100 VOLTS

70 WATTS

BDX33B

BDX34B

BDX33C

BDX34C

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

Unit

Vdc

Adc

CEO

100

5.0

Collector Current — Continuous

Peak

Base Current

0.25

Adc

Total Device Dissipation

@ T = 25 C

0.56

Watts

W/ C

Derate above 25 C

Operating and Storage Junction

Temperature Range

T , T

–65 to +150

stg

CASE 221A–06

TO–220AB

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

1.78

C/W

θJC

100

120

140

160

, CASE TEMPERATURE (

Figure 1. Power Derating

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 7

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4 5 6

中文翻译

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BDX33B 替代型号

型号	品牌	替代类型	描述	数据表
BDX33BG	ONSEMI	类似代替	Darlington Complementary Silicon Power Transistors
BDX33B-BP	MCC	功能相似	Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast

与BDX33B相关器件

型号	品牌	获取价格	描述	数据表
BDX33B/D	ETC	获取价格	Darlington Complementary Silicon Power Transistors
BDX33B_06	ONSEMI	获取价格	Darlington Complementary Silicon Power Transistors
BDX33B_07	ONSEMI	获取价格	Darlington Complementary Silicon Power Transistors
BDX33B16	MOTOROLA	获取价格	10A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB
BDX33B16A	MOTOROLA	获取价格	Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BDX33B-6200	RENESAS	获取价格	10A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB
BDX33B-6203	RENESAS	获取价格	Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BDX33B-6226	RENESAS	获取价格	10A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB
BDX33B-6255	RENESAS	获取价格	Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BDX33B-6258	RENESAS	获取价格	Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast