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BDX33B PDF预览

BDX33B

更新时间: 2024-11-28 22:39:31
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体开关晶体管局域网
页数 文件大小 规格书
5页 42K
描述
Power Linear and Switching Applications

BDX33B 数据手册

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BDX33/A/B/C  
Power Linear and Switching Applications  
High Gain General Purpose  
Power Darlington TR  
Complement to BDX34/34A/34B/34C respectively  
TO-220  
1.Base 2.Collector 3.Emitter  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector Current (DC)  
CBO  
: BDX33  
45  
60  
80  
V
V
V
V
: BDX33A  
: BDX33B  
: BDX33C  
100  
V
CEO  
: BDX33  
45  
60  
80  
V
V
V
V
: BDX33A  
: BDX33B  
: BDX33C  
100  
I
I
I
10  
15  
A
A
C
*Collector Current (Pulse)  
Base Current  
CP  
B
0.25  
A
P
Collector Dissipation (T =25°C)  
70  
W
°C  
°C  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 65 ~ 150  
STG  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

BDX33B 替代型号

型号 品牌 替代类型 描述 数据表
BDX33BG ONSEMI

完全替代

Darlington Complementary Silicon Power Transistors
BDX33B MOTOROLA

类似代替

Darlington Complementary Silicon Power Transistors
BDX33B ONSEMI

功能相似

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

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BDX33B-6258 RENESAS

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