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BDX33AAF PDF预览

BDX33AAF

更新时间: 2024-11-07 03:22:39
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 局域网开关晶体管
页数 文件大小 规格书
4页 156K
描述
10A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB

BDX33AAF 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.63
外壳连接:COLLECTOR最大集电极电流 (IC):10 A
集电极-发射极最大电压:60 V配置:DARLINGTON
最小直流电流增益 (hFE):750JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN功耗环境最大值:70 W
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):3 MHzBase Number Matches:1

BDX33AAF 数据手册

 浏览型号BDX33AAF的Datasheet PDF文件第2页浏览型号BDX33AAF的Datasheet PDF文件第3页浏览型号BDX33AAF的Datasheet PDF文件第4页 

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BDX33A-DR6269 RENESAS

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Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast