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BDX33A PDF预览

BDX33A

更新时间: 2024-11-05 06:41:59
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
3页 122K
描述
Silicon NPN Power Transistors

BDX33A 数据手册

 浏览型号BDX33A的Datasheet PDF文件第2页浏览型号BDX33A的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
BDX33/A/B/C  
DESCRIPTION  
·With TO-220C package  
·High DC current gain  
·DARLINGTON  
·Complement to type BDX34/A/B/C  
APPLICATIONS  
·For power linear and switching  
applications  
PINNING  
PIN  
1
DESCRIPTION  
Base  
Collector;connected to  
mounting base  
2
3
Emitter  
Absolute maximum ratings(Ta=25)  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
45  
UNIT  
BDX33  
BDX33A  
BDX33B  
BDX33C  
BDX33  
60  
VCBO  
Collector-base voltage  
Open emitter  
V
80  
100  
45  
BDX33A  
BDX33B  
BDX33C  
60  
VCEO  
Collector-emitter voltage  
Open base  
V
80  
100  
5
VEBO  
IC  
ICM  
IB  
Emitter-base voltage  
Collector current-DC  
Collector current-Pulse  
Base current  
Open collector  
V
A
10  
15  
A
0.25  
70  
A
PC  
Tj  
Collector power dissipation  
Junction temperature  
Storage temperature  
TC=25  
W
150  
-65~150  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
Thermal resistance junction to case  
MAX  
UNIT  
Rth j-c  
1.78  
/W  

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