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BDX33 PDF预览

BDX33

更新时间: 2024-11-05 08:52:03
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
4页 857K
描述
NPN Silicon Power Darlingtons

BDX33 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.19
最大集电极电流 (IC):10 A集电极-发射极最大电压:45 V
配置:DARLINGTON WITH BUILT-IN DIODE最小直流电流增益 (hFE):750
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):70 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

BDX33 数据手册

 浏览型号BDX33的Datasheet PDF文件第2页浏览型号BDX33的Datasheet PDF文件第3页浏览型号BDX33的Datasheet PDF文件第4页 
M C C  
BDX33  
THRU  
BDX33D  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
)HDWXUHVꢀ  
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates  
RoHS Compliant. See ordering information)  
NPN Silicon  
Power Darlingtons  
Designed For Complementary Use with BDX34, BDX34A, BDX34B,  
BDX34C and BDX34D  
70W at 25 Cass Temperature  
·
·
10A Continuous Collector Current  
Minimum hFE of 750 at 3.0V, 3.0A  
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
TO-220  
°
Symbol  
Rating  
Collector-Base Voltage (IE=0)  
BDX33  
BDX33A  
BDX33B  
BDX33C  
BDX33D  
Collector-Emitter Voltage (IB=0)  
BDX33  
BDX33A  
Value  
Unit  
C
B
S
F
VCBO  
45  
60  
80  
100  
100  
Q
V
T
A
U
VCEO  
45  
60  
80  
100  
100  
5.0  
10  
0.3  
70  
1
2
3
BDX33B  
BDX33C  
BDX33D  
V
H
K
VEBO  
IC  
IB  
Emitter-Base Voltage  
Continuous Collector Current  
Continuous Base Current  
Continuous Device Dissipation at (or below) 25  
Case Temperature (see Note2)  
Continuous Device Dissipation at (or below) 25  
Free Air Temperature (see Note 3)  
Operating Free Air Temperature Range  
V
A
A
PTOT  
W
V
L
J
PTOT  
2.0  
W
D
R
G
PIN 1.  
PIN 2.  
PIN 3.  
BASE  
TJ  
TSTG  
TA  
-55~+150  
-55~+150  
-55~+150  
N
COLLECTOR  
EMITTER  
Storage Temperature Range  
Operating Free-Air Temperature Range  
DIMENSIONS  
INCHES  
MM  
Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex 7.  
MIN  
14.22  
9.65  
MAX  
15.88  
10.67  
NOTE  
DIM  
A
MIN  
MAX  
.625  
2. Derate Linearly to 150 Case Temperature at the Rate of 0.56 W/  
3. Derate Linearly to 150 Free Air Temperature at the Rate of 16m W/  
.560  
.380  
.140  
B
C
.420  
.190  
3.56  
4.82  
D
F
.020  
.139  
.190  
---  
.045  
.161  
.110  
.250  
.025  
0.51  
3.53  
2.29  
---  
1.14  
4.09  
2.79  
6.35  
0.64  
°
Symbol  
Parameter  
Collector-Emitter Breakdown  
Voltage  
Min  
Typ  
Max  
Unit  
G
H
J
.012  
0.30  
K
L
.500  
.045  
.580  
.060  
12.70  
1.14  
14.73  
1.52  
V(BR)CEO  
(IC=100mA, IB=0,see note 3)  
BDX33  
BDX33A  
BDX33B  
BDX33C  
45  
60  
80  
100  
100  
V
N
.190  
.210  
4.83  
5.33  
Q
R
S
T
U
V
.100  
.080  
.045  
.230  
-----  
.135  
.115  
.055  
.270  
.050  
-----  
2.54  
2.04  
1.14  
5.84  
-----  
3.43  
2.92  
1.39  
6.86  
1.27  
-----  
BDX33D  
.045  
1.15  
www.mccsemi.com  
Revision: A  
2011/01/01  
1 of 4  

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