BDX18N

更新时间： 2024-11-28 06:41:59

品牌	Logo	应用领域
COMSET		晶体晶体管
页数	文件大小	规格书
3页	149K
描述
PNP SILICON TRANSISTOR EPITAXIAL BASE

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中文翻译

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数据手册

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BDX18N 数据手册

BDX18 – BDX18N

PNP SILICON TRANSISTOR EPITAXIAL BASE

LF Large Signal Power Amplification

High Current Switching

Suitable for :

Series and shunt regulators

High Fidelity Amplifiers

Power-switching circuits

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

BDX18

Collector-Emitter Voltage

Emitter-Base Voltage

V_CEO

-60

BDX18N

-70

-65

BDX18

V_CER

V_EBO

V_CBO

V_CEX

R_BE=100Ω

BDX18N

BDX18

-7

BDX18N

-100

-70

-90

-70

BDX18

BDX18N

BDX18

Collector-Emitter Voltage

V_BE=+1.5 V

@ T_C= 25°

BDX18N

BDX18

Collector Current

Base Current

-15

-7

I_C

I_B

BDX18N

BDX18

BDX18N

BDX18

Power Dissipation

P_T

117

Watts

°C

BDX18N

Junction Temperature

Storage Temperature

T_J

T_S

BDX18

-65 to +200

BDX18N

COMSET SEMICONDUCTORS

1/3

12 3

中文翻译

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