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BDX20 PDF预览

BDX20

更新时间: 2024-11-26 06:41:59
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
2页 77K
描述
isc Silicon PNP Power Transistor

BDX20 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.56
Base Number Matches:1

BDX20 数据手册

 浏览型号BDX20的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon PNP Power Transistor  
BDX20  
DESCRIPTION  
·High Current Capability  
·Collector-Emitter Sustaining Voltage-  
: VCEO(SUS)= -140V(Min)  
·High Switching Speed  
APPLICATIONS  
·Designed for LF large signal power amplification.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEX  
VCEO  
VEBO  
IC  
PARAMETER  
VALUE  
-160  
-160  
-140  
-7  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage- VBE= 1.5V  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
V
Collector Current-Continuous  
Base Current-Continuous  
-10  
A
IB  
-7  
A
Collector Power Dissipation  
@TC=25  
PC  
117  
W
TJ  
Junction Temperature  
Storage Temperature  
200  
-65~200  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Thermal Resistance,Junction to Case  
1.5  
/W  
Rth j-c  
isc Websitewww.iscsemi.cn  

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