Datasheet > BDX18

BDX18

更新时间： 2024-09-14 08:52:03

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
3页	39K
描述
Silicon PNP Power Transistors

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中文翻译

获取价格

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BDX18 数据手册

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

BDX18

DESCRIPTION

·With TO-3 package

·High switching speed

APPLICATIONS

·LF large signal power amplification

·Suitable for series and shunt regulators, high

fidelity amplifiers and power switching circuits

PINNING (See Fig.2)

DESCRIPTION

Base

Emitter

Collector

Fig.1 simplified outline (TO-3) and symbol

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

-100

-60

UNIT

Open base

Open collector

-7

-15

I_B

Base current

-7

P_T

Total power dissipation

Junction temperature

Storage temperature

T_C=25℃

117

℃

T_j

-65~200

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

R_{th j-c}

Thermal resistance from junction to case

1.5

℃/W

12 3

中文翻译

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