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BDW83 PDF预览

BDW83

更新时间: 2024-11-01 22:29:59
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页数 文件大小 规格书
6页 185K
描述
NPN SILICON POWER DARLINGTONS

BDW83 技术参数

生命周期:Transferred包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.66
外壳连接:COLLECTOR最大集电极电流 (IC):15 A
集电极-发射极最大电压:45 V配置:DARLINGTON
最小直流电流增益 (hFE):100JESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BDW83 数据手册

 浏览型号BDW83的Datasheet PDF文件第2页浏览型号BDW83的Datasheet PDF文件第3页浏览型号BDW83的Datasheet PDF文件第4页浏览型号BDW83的Datasheet PDF文件第5页浏览型号BDW83的Datasheet PDF文件第6页 
BDW83, BDW83A, BDW83B, BDW83C, BDW83D  
NPN SILICON POWER DARLINGTONS  
Copyright © 1997, Power Innovations Limited, UK  
AUGUST 1978 - REVISED MARCH 1997  
Designed for Complementary Use with  
BDW84, BDW84A, BDW84B, BDW84C and  
BDW84D  
SOT-93 PACKAGE  
(TOP VIEW)  
B
C
E
1
2
150 W at 25°C Case Temperature  
15 A Continuous Collector Current  
Minimum h of 750 at 3 V, 6 A  
FE  
3
Pin 2 is in electrical contact with the mounting base.  
MDTRAA  
absolute maximum ratings at 25°C case temperature (unless otherwise noted)  
RATING  
SYMBOL  
VALUE  
UNIT  
BDW83  
45  
BDW83A  
BDW83B  
BDW83C  
BDW83D  
BDW83  
60  
Collector-base voltage (IE = 0)  
VCBO  
80  
V
V
100  
120  
45  
BDW83A  
BDW83B  
BDW83C  
BDW83D  
60  
Collector-emitter voltage (IB = 0) (see Note 1)  
VCEO  
80  
100  
120  
Emitter-base voltage  
VEBO  
IC  
5
15  
V
A
Continuous collector current  
Continuous base current  
IB  
0.5  
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)  
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)  
Unclamped inductive load energy (see Note 4)  
Operating junction temperature range  
Ptot  
Ptot  
150  
W
W
mJ  
°C  
°C  
°C  
3.5  
2
½LIC  
100  
Tj  
Tstg  
TA  
-65 to +150  
-65 to +150  
-65 to +150  
Operating temperature range  
Operating free-air temperature range  
NOTES: 1. These values apply when the base-emitter diode is open circuited.  
2. Derate linearly to 150°C case temperature at the rate of 1.2 W/°C.  
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.  
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, RBE = 100 W,  
VBE(off) = 0, RS = 0.1 W, VCC = 20 V.  
P R O D U C T  
I N F O R M A T I O N  
Information is current as of publication date. Products conform to specifications in accordance  
with the terms of Power Innovations standard warranty. Production processing does not  
necessarily include testing of all parameters.  
1

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