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BDW83B PDF预览

BDW83B

更新时间: 2024-11-02 12:51:11
品牌 Logo 应用领域
COMSET 晶体晶体管
页数 文件大小 规格书
3页 121K
描述
NPN SILICON DARLINGTONS POWER TRANSISTORS

BDW83B 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.59
Base Number Matches:1

BDW83B 数据手册

 浏览型号BDW83B的Datasheet PDF文件第2页浏览型号BDW83B的Datasheet PDF文件第3页 
NPN BDW83, BDW83A, BDW83B,  
BDW83C, BDW83D,  
NPN SILICON DARLINGTONS POWER TRANSISTORS  
They are silicon epitaxial-base NPN power monolithic Darlington transistor mounted in Jedec  
TO-218 plastic package.  
They are intended for use in power linear and switching applications.  
The complementary are BDW84, BDW84A, BDW84B, BDW84C, BDW84D  
Compliance to RoHS.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCEO  
Ratings  
Value  
Unit  
BDW83  
45  
60  
80  
100  
120  
45  
60  
80  
100  
120  
5
15  
0.5  
BDW83A  
BDW83B  
BDW83C  
BDW83D  
BDW83  
BDW83A  
BDW83B  
BDW83C  
BDW83D  
Collector-Emitter Voltage  
Collector- Emitter Voltage  
IB = 0  
V
VCBO  
IE = 0  
IC = 0  
V
VEBO  
IC  
IB  
Emitter-Base Voltage  
Collector Current  
Base Current  
V
A
A
25°C case temperatur  
25°C free aire temperatur  
150  
3.5  
Pt  
Total Power Dissipation  
W
TJ  
TStg  
Junction Temperature  
Storage Temperature  
-65 to +150  
-65 to +150  
°C  
°C  
THERMAL CHARACTERISTICS  
Symbol  
Ratings  
Value  
Unit  
Junction to Case Thermal Resistance  
Junction to Free Air Thermal Resistance  
RthJC  
RthJA  
0.83  
35.7  
°C/W  
23/10/2012  
COMSET SEMICONDUCTORS  
1 | 3  

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