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BDW83D PDF预览

BDW83D

更新时间: 2024-11-19 06:41:59
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管开关局域网
页数 文件大小 规格书
3页 123K
描述
Silicon NPN Power Transistors

BDW83D 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.57
Is Samacsys:NBase Number Matches:1

BDW83D 数据手册

 浏览型号BDW83D的Datasheet PDF文件第2页浏览型号BDW83D的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
BDW83/83A/83B/83C/83D  
DESCRIPTION  
·With TO-3PN package  
·Complement to type BDW84/84A/84B/84C/84D  
·DARLINGTON  
·High DC current gain  
APPLICATIONS  
·For use in power linear and switching  
applications.  
PINNING  
PIN  
1
DESCRIPTION  
Base  
Collector;connected to  
mounting base  
2
Fig.1 simplified outline (TO-3PN) and symbol  
3
Emitter  
Absolute maximum ratings(Tc=25)  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
45  
UNIT  
BDW83  
BDW83A  
BDW83B  
BDW83C  
BDW83D  
BDW83  
60  
VCBO  
Collector-base voltage  
Open emitter  
V
80  
100  
120  
45  
BDW83A  
BDW83B  
BDW83C  
BDW83D  
60  
VCEO  
Collector-emitter voltage  
Open base  
V
80  
100  
120  
5
VEBO  
IC  
Emitter-base voltage  
Collector current  
Base current  
Open collector  
V
A
A
15  
IB  
0.5  
TC=25  
Ta=25℃  
150  
3.5  
PC  
Collector power dissipation  
W
Tj  
Junction temperature  
Storage temperature  
150  
-65~150  
Tstg  

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