Datasheet > BDW83C_02

BDW83C_02

更新时间： 2024-11-02 03:21:39

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管达林顿晶体管
页数	文件大小	规格书
4页	50K
描述
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

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BDW83C_02 数据手册

BDW83C

BDW84C

COMPLEMENTARY SILICON POWER

DARLINGTON TRANSISTORS

■

BDW83C IS A STMicroelectronics

PREFERRED SALESTYPE

■

COMPLEMENTARY PNP - NPN DEVICES

HIGH CURRENT CAPABILITY

FAST SWITCHING SPEED

HIGH DC CURRENT GAIN

APPLICATIONS

■

LINEAR AND SWITCHING INDUSTRIAL

EQUIPMENT

DESCRIPTION

TO-218

The BDW83C is a Silicon Epitaxial-Base NPN

power monolithic Darlington transistor mounted in

Jedec TO-218 plastic package. It is intended for

use in power linear and switching applications.

The complementary type is BDW84C.

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

BDW83C

BDW84C

100

Unit

NPN

PNP

V_CBO

V_CEO

V_EBO

I_C

Collector-Base Voltage (I_E= 0)

Collector-Emitter Voltage (I_B= 0)

Emitter-Base Voltage (I_C= 0)

Collector Current

100

I_CM

I_B

Collector Peak Current

Base Current

0.5

P_tot

T_stg

T_j

130

^oC

Total Dissipation at T_c≤ 25 C

Storage Temperature

-65 to 150

150

Max. Operating Junction Temperature

1/4

December 2002

12 3 4

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BDW83C_07	STMICROELECTRONICS	获取价格	NPN power Darlington transistor
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BDW83-S	BOURNS	获取价格	Power Bipolar Transistor, 15A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,