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BDW83B PDF预览

BDW83B

更新时间: 2024-01-03 16:41:26
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
3页 123K
描述
Silicon NPN Power Transistors

BDW83B 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.64
外壳连接:COLLECTOR最大集电极电流 (IC):15 A
集电极-发射极最大电压:45 V配置:DARLINGTON
最小直流电流增益 (hFE):100JESD-30 代码:R-PSFM-T3
JESD-609代码:e1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:TIN SILVER COPPER
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

BDW83B 数据手册

 浏览型号BDW83B的Datasheet PDF文件第2页浏览型号BDW83B的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
BDW83/83A/83B/83C/83D  
DESCRIPTION  
·With TO-3PN package  
·Complement to type BDW84/84A/84B/84C/84D  
·DARLINGTON  
·High DC current gain  
APPLICATIONS  
·For use in power linear and switching  
applications.  
PINNING  
PIN  
1
DESCRIPTION  
Base  
Collector;connected to  
mounting base  
2
Fig.1 simplified outline (TO-3PN) and symbol  
3
Emitter  
Absolute maximum ratings(Tc=25)  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
45  
UNIT  
BDW83  
BDW83A  
BDW83B  
BDW83C  
BDW83D  
BDW83  
60  
VCBO  
Collector-base voltage  
Open emitter  
V
80  
100  
120  
45  
BDW83A  
BDW83B  
BDW83C  
BDW83D  
60  
VCEO  
Collector-emitter voltage  
Open base  
V
80  
100  
120  
5
VEBO  
IC  
Emitter-base voltage  
Collector current  
Base current  
Open collector  
V
A
A
15  
IB  
0.5  
TC=25  
Ta=25℃  
150  
3.5  
PC  
Collector power dissipation  
W
Tj  
Junction temperature  
Storage temperature  
150  
-65~150  
Tstg  

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