BDW83A

更新时间： 2024-11-02 03:21:39

品牌	Logo	应用领域
伯恩斯 - BOURNS		/
页数	文件大小	规格书
5页	121K
描述
NPN SILICON POWER DARLINGTONS

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BDW83A 数据手册

BDW83, BDW83A, BDW83B, BDW83C, BDW83D

NPN SILICON POWER DARLINGTONS

●

Designed for Complementary Use with

BDW84, BDW84A, BDW84B, BDW84C and

BDW84D

SOT-93 PACKAGE

(TOP VIEW)

●

150 W at 25°C CaseTemperature

15 A Continuous Collector Current

Minimum h of 750 at 3V, 6 A

Pin 2 is in electrical contact with the mounting base.

MDTRAAA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

UNIT

BDW83

BDW83A

BDW83B

BDW83C

BDW83D

BDW83

Collector-base voltage (I_E= 0)

V_CBO

100

120

BDW83A

BDW83B

BDW83C

BDW83D

Collector-emitter voltage (I_B= 0) (see Note 1)

V_CEO

100

120

Emitter-base voltage

V_EBO

I_C

Continuous collector current

Continuous base current

I_B

0.5

Continuous device dissipation at (or below) 25°C case temperature (see Note 2)

Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)

Unclamped inductive load energy (see Note 4)

Operating junction temperature range

P_tot

150

°C

3.5

½LI_C

100

T_j

T_stg

T_A

-65 to +150

Operating temperature range

Operating free-air temperature range

NOTES: 1. These values apply when the base-emitter diode is open circuited.

2. Derate linearly to 150°C case temperature at the rate of 1.2 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.

4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I_B(on)= 5 mA, R_BE= 100 Ω,

_BE(off)= 0, R_S= 0.1 Ω, V_CC= 20 V.

AUGUST 1978 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

12 3 4 5

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