是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.13 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 15 A |
集电极-发射极最大电压: | 60 V | 配置: | DARLINGTON |
最小直流电流增益 (hFE): | 750 | JEDEC-95代码: | TO-218 |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | MATTE TIN (315) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 10 | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BDW83A-S | BOURNS |
获取价格 |
暂无描述 | |
BDW83B | SEME-LAB |
获取价格 |
Bipolar NPN Device in a Hermetically sealed TO3 | |
BDW83B | ISC |
获取价格 |
Silicon NPN Power Transistors | |
BDW83B | SAVANTIC |
获取价格 |
Silicon NPN Power Transistors | |
BDW83B | COMSET |
获取价格 |
NPN SILICON DARLINGTONS POWER TRANSISTORS | |
BDW83B | POINN |
获取价格 |
NPN SILICON POWER DARLINGTONS | |
BDW83B | BOURNS |
获取价格 |
NPN SILICON POWER DARLINGTONS | |
BDW83BLEADFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, 15A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-218, Plastic | |
BDW83B-S | BOURNS |
获取价格 |
Power Bipolar Transistor, 15A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, | |
BDW83C | SAVANTIC |
获取价格 |
Silicon NPN Power Transistors |