Datasheet > BDV65B/D

BDV65B/D

更新时间： 2024-11-17 23:35:11

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描述
Complementary Silicon Plastic Power Darlingtons

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数据手册

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BDV65B/D 数据手册

ON Semiconductort

NPN

BDV65B

PNP

Complementary Silicon Plastic

Power Darlingtons

BDV64B

. . . for use as output devices in complementary general purpose

amplifier applications.

• High DC Current Gain

DARLINGTONS

10 AMPERES

HFE = 1000 (min.) @ 5 Adc

• Monolithic Construction with Built–in Base Emitter Shunt Resistors

COMPLEMENTARY

SILICON

POWER TRANSISTORS

60–80–100–120 VOLTS

125 WATTS

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

Value

100

5.0

Unit

Vdc

Adc

CEO

Collector Current — Continuous

— Peak

Base Current

0.5

Adc

Total Device Dissipation

@ T = 25_C

125

1.0

Watts

W/_C

Derate above 25_C

Operating and Storage Junction

Temperature Range

T , T

–65 to +150

stg

CASE 340D–02

SOT 93, TO–218 TYPE

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

1.0

_C/W

1.0

0.8

0.6

0.4

0.2

100

125

150

T , CASE TEMPERATURE (°C)

Figure 1. Power Derating

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

March, 2001 – Rev. 10

BDV65B/D

12 3 4

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与BDV65B/D相关器件

型号	品牌	获取价格	描述	数据表
BDV65B_06	ONSEMI	获取价格	Complementary Silicon Plastic Power Darlingtons
BDV65B_08	ONSEMI	获取价格	Complementary Silicon Plastic Power Darlingtons
BDV65BG	ONSEMI	获取价格	Complementary Silicon Plastic Power Darlingtons
BDV65BLEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 12A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-218, Plasti
BDV65C	NJSEMI	获取价格	Trans Darlington NPN 120V 12A 3-Pin(3+Tab) SOT-93
BDV65C	SAVANTIC	获取价格	Silicon NPN Power Transistors
BDV65C	ISC	获取价格	Silicon NPN Darlington Power Transistor
BDV65C	BOURNS	获取价格	NPN SILICON POWER DARLINGTONS
BDV65C	POINN	获取价格	NPN SILICON POWER DARLINGTONS
BDV65C	COMSET	获取价格	NNP SILICON DARLINGTONS POWER TRANSISTORS