BDV65Bꢀ(NPN),
BDV64Bꢀ(PNP)
Complementary Silicon
Plastic Power Darlingtons
. . . for use as output devices in complementary general purpose
amplifier applications.
http://onsemi.com
• High DC Current Gain − HFE = 1000 (min.) @ 5 Adc
• Monolithic Construction with Built−in Base Emitter Shunt Resistors
• Pb−Free Packages are Available*
10 AMPERE DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
60−80−100−120 VOLTS,
125 WATTS
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Symbol
Max
100
100
5.0
Unit
Vdc
Vdc
Vdc
Adc
V
CEO
V
CB
NPN
PNP
V
EB
COLLECTOR 2,4
COLLECTOR 2
Collector Current − Continuous
− Peak
I
C
10
20
BASE
1
BASE
1
Base Current
I
B
0.5
Adc
Total Device Dissipation @ T = 25_C
P
125
1.0
W
C
D
Derate above 25_C
W/_C
EMITTER 3
EMITTER 3
Operating and Storage Junction Temperature T , T
–ꢀ65 to
+ꢀ150
_C
J
stg
BDV65B
BDV64B
Range
THERMAL CHARACTERISTICS
MARKING
DIAGRAM
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
R
1.0
_C/W
q
JC
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
SOT−93
(TO−218)
CASE 340D
AYWW
BDV6xBG
1
2
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
3
A
Y
= Assembly Location
= Year
WW
G
BDV6xB
= Work Week
= Pb−Free Package
= Device Code
x = 4 or 5
ORDERING INFORMATION
Device
Package
Shipping
BDV65B
SOT−93
30 Units / Rail
30 Units / Rail
BDV65BG
SOT−93
(Pb−Free)
BDV64B
SOT−93
30 Units / Rail
30 Units / Rail
BDV64BG
SOT−93
(Pb−Free)
© Semiconductor Components Industries, LLC, 2008
1
Publication Order Number:
September, 2008 − Rev. 13
BDV65B/D