BDV65C

更新时间： 2024-11-18 06:41:59

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管局域网
页数	文件大小	规格书
2页	225K
描述
Silicon NPN Darlington Power Transistor

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BDV65C 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Darlington Power Transistor

BDV65/A/B/C

DESCRIPTION

·Collector Current -I_C= 12A

·Collector-Emitter Saturation Voltage-

: V_CE(sat)= 2.0V(Max.)@ I_C= 5A

·Complement to Type BDV64/A/B/C

APPLICATIONS

·Designed for audio output stages and general amplifier

and switching applications

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

BDV65

BDV65A

BDV65B

BDV65C

BDV65

Collector-Base

Voltage

V_CBO

100

120

BDV65A

BDV65B

BDV65C

Collector-Emitter

Voltage

V_CEO

100

120

V_EBO

I_C

I_CM

I_B

Emitter-Base Voltage

Collector Current-Continuous

Collector Current-Peak

Base Current-Continuous

0.5

Collector Power Dissipation

@ T_C=25℃

Collector Power Dissipation

@ T_a=25℃

125

3.5

P_C

T_J

Junction Temperature

150

-65~150

℃

Storage Temperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

1.0

UNIT

℃/W

Thermal Resistance,Junction to Case

Thermal Resistance,Junction to Ambient

R_{th j-c}

35.7

R_{th j-a}

isc Website：www.iscsemi.cn

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