是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.75 | 风险等级: | 5.19 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 12 A |
集电极-发射极最大电压: | 60 V | 配置: | DARLINGTON |
最小直流电流增益 (hFE): | 1000 | JEDEC-95代码: | TO-218 |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | MATTE TIN (315) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 10 | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 60 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BDV65CF | PHILIPS |
获取价格 |
Transistor, |
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BDV65LEADFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, 12A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-218, Plastic |
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BDV66 | ISC |
获取价格 |
isc Silicon PNP Darlington Power Transistor |
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BDV66 | COMSET |
获取价格 |
PNP SILICON DARLINGTONS POWER TRANSISTORS |
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BDV66 | MOSPEC |
获取价格 |
POWER TRANSISTORS(16A,60-100V,125W) |
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BDV66A | COMSET |
获取价格 |
PNP SILICON DARLINGTONS POWER TRANSISTORS |
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BDV66A | ISC |
获取价格 |
isc Silicon PNP Darlington Power Transistor |
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BDV66A | MOSPEC |
获取价格 |
POWER TRANSISTORS(16A,60-100V,125W) |
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BDV66AF | PHILIPS |
获取价格 |
Transistor, |
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BDV66A-SM | ETC |
获取价格 |
TRANSISTOR DARLINGTON |
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