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BDV66A PDF预览

BDV66A

更新时间: 2024-02-29 11:52:34
品牌 Logo 应用领域
COMSET 晶体晶体管
页数 文件大小 规格书
4页 79K
描述
PNP SILICON DARLINGTONS POWER TRANSISTORS

BDV66A 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.69最大集电极电流 (IC):16 A
配置:DARLINGTON最小直流电流增益 (hFE):1000
JESD-609代码:e0最高工作温度:150 °C
极性/信道类型:PNP最大功率耗散 (Abs):60 W
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)标称过渡频率 (fT):40 MHz
Base Number Matches:1

BDV66A 数据手册

 浏览型号BDV66A的Datasheet PDF文件第2页浏览型号BDV66A的Datasheet PDF文件第3页浏览型号BDV66A的Datasheet PDF文件第4页 
BDV66-A-B-C  
PNP SILICON DARLINGTONS POWER TRANSISTORS  
They are silicon epitaxial base transistors mounted in TO-3PN.  
Theyare designed for audio output stages and general amplifier and switching applications.  
complementary is BDV67-A-B-C  
Compliance to RoHS.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCEO  
Ratings  
Value  
Unit  
BDV66  
-80  
-100  
-120  
-140  
-80  
-100  
-120  
-140  
BDV66A  
BDV66B  
BDV66C  
BDV66  
BDV66A  
BDV66B  
BDV66C  
BDV66  
BDV66A  
BDV66B  
BDV66C  
BDV66  
BDV66A  
BDV66B  
BDV66C  
BDV66  
BDV66A  
BDV66B  
BDV66C  
BDV66  
BDV66A  
BDV66B  
BDV66C  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
V
VCBO  
VEBO  
IC  
V
V
-5.0  
-16  
-20  
-0.5  
A
A
ICM  
Collector Peak Current  
Base Current  
IB  
26/09/2012  
COMSET SEMICONDUCTORS  
1/4  

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