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BDV65BG PDF预览

BDV65BG

更新时间: 2024-09-26 08:51:59
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管放大器局域网
页数 文件大小 规格书
4页 107K
描述
Complementary Silicon Plastic Power Darlingtons

BDV65BG 技术参数

是否无铅:不含铅生命周期:Active
零件包装代码:TO-218包装说明:PLASTIC, CASE 340D-02, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:2 weeks
风险等级:0.82Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):10 A
集电极-发射极最大电压:100 V配置:DARLINGTON WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):1000JEDEC-95代码:TO-247
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):125 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:40
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

BDV65BG 数据手册

 浏览型号BDV65BG的Datasheet PDF文件第2页浏览型号BDV65BG的Datasheet PDF文件第3页浏览型号BDV65BG的Datasheet PDF文件第4页 
BDV65Bꢀ(NPN),  
BDV64Bꢀ(PNP)  
Complementary Silicon  
Plastic Power Darlingtons  
. . . for use as output devices in complementary general purpose  
amplifier applications.  
http://onsemi.com  
High DC Current Gain HFE = 1000 (min.) @ 5 Adc  
Monolithic Construction with Builtin Base Emitter Shunt Resistors  
PbFree Packages are Available*  
10 AMPERE DARLINGTON  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
6080100120 VOLTS,  
125 WATTS  
MAXIMUM RATINGS  
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
Max  
100  
100  
5.0  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
V
CEO  
V
CB  
NPN  
PNP  
V
EB  
COLLECTOR 2,4  
COLLECTOR 2  
Collector Current Continuous  
Peak  
I
C
10  
20  
BASE  
1
BASE  
1
Base Current  
I
B
0.5  
Adc  
Total Device Dissipation @ T = 25_C  
P
125  
1.0  
W
C
D
Derate above 25_C  
W/_C  
EMITTER 3  
EMITTER 3  
Operating and Storage Junction Temperature T , T  
65 to  
+150  
_C  
J
stg  
BDV65B  
BDV64B  
Range  
THERMAL CHARACTERISTICS  
MARKING  
DIAGRAM  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, JunctiontoCase  
R
1.0  
_C/W  
q
JC  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
SOT93  
(TO218)  
CASE 340D  
AYWW  
BDV6xBG  
1
2
*For additional information on our PbFree strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
3
A
Y
= Assembly Location  
= Year  
WW  
G
BDV6xB  
= Work Week  
= PbFree Package  
= Device Code  
x = 4 or 5  
ORDERING INFORMATION  
Device  
Package  
Shipping  
BDV65B  
SOT93  
30 Units / Rail  
30 Units / Rail  
BDV65BG  
SOT93  
(PbFree)  
BDV64B  
SOT93  
30 Units / Rail  
30 Units / Rail  
BDV64BG  
SOT93  
(PbFree)  
© Semiconductor Components Industries, LLC, 2008  
1
Publication Order Number:  
September, 2008 Rev. 13  
BDV65B/D  

BDV65BG 替代型号

型号 品牌 替代类型 描述 数据表
BDV65B ONSEMI

完全替代

DARLINGTONS 10 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS
BDV64BG ONSEMI

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Complementary Silicon Plastic Power Darlingtons
TIP142G ONSEMI

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Darlington Complementary Silicon Power Transistors

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