Datasheet > BDV65B_06

BDV65B_06

更新时间： 2024-11-18 03:21:35

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
4页	116K
描述
Complementary Silicon Plastic Power Darlingtons

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中文翻译

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数据手册

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BDV65B_06 数据手册

ON Semiconductort

NPN

BDV65B

PNP

Complementary Silicon Plastic

Power Darlingtons

BDV64B

. . . for use as output devices in complementary general purpose

amplifier applications.

• High DC Current Gain

DARLINGTONS

10 AMPERES

COMPLEMENTARY

SILICON

POWER TRANSISTORS

60−80−100−120 VOLTS

125 WATTS

HFE = 1000 (min.) @ 5 Adc

• Monolithic Construction with Built−in Base Emitter Shunt Resistors

w These devices are available in Pb−free package(s). Specifications herein

apply to both standard and Pb−free devices. Please see our website at

www.onsemi.com for specific Pb−free orderable part numbers, or

contact your local ON Semiconductor sales office or representative.

MAXIMUM RATINGS

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Symbol

Value

100

5.0

Unit

Vdc

Adc

CEO

Collector Current — Continuous

— Peak

Base Current

0.5

Adc

Total Device Dissipation

CASE 340D−02

SOT 93, TO−218 TYPE

@ T = 25_C

125

1.0

Watts

W/_C

Derate above 25_C

Operating and Storage Junction

Temperature Range

T , T

–65 to +150

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

1.0

_C/W

1.0

0.8

0.6

0.4

0.2

100

125

150

T , CASE TEMPERATURE (°C)

Figure 1. Power Derating

Publication Order Number:

March, 2006 − Rev. 12

BDV65B/D

12 3 4

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