BDV64-S

更新时间： 2024-11-18 12:53:27

品牌	Logo	应用领域
伯恩斯 - BOURNS		/
页数	文件大小	规格书
4页	110K
描述
PNP SILICON POWER DARLINGTONS

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中文翻译

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数据手册

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BDV64-S 数据手册

BDV64, BDV64A, BDV64B, BDV64C

PNP SILICON POWER DARLINGTONS

●

Designed for Complementary Use with

BDV65, BDV65A, BDV65B and BDV65C

SOT-93 PACKAGE

(TOP VIEW)

●

125 W at 25°C CaseTemperature

12 A Continuous Collector Current

Minimum h of 1000 at 4 V, 5 A

Pin 2 is in electrical contact with the mounting base.

MDTRAA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

UNIT

BDV64

-60

-80

BDV64A

BDV64B

BDV64C

BDV64

Collector-base voltage (I_E= 0)

Collector-emitter voltage (I_B= 0)

V_CBO

-100

-120

-60

BDV64A

BDV64B

BDV64C

-80

V_CEO

-100

-120

-5

Emitter-base voltage

V_EBO

I_C

I_CM

I_B

Continuous collector current

Peak collector current (see Note 1)

Continuous base current

-12

-15

-0.5

Continuous device dissipation at (or below) 25°C case temperature (see Note 2)

Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)

Operating junction temperature range

P_tot

T_j

125

°C

3.5

-65 to +150

260

Storage temperature range

T_stg

T_L

Lead temperature 3.2 mm from case for 10 seconds

NOTES: 1. This value applies for t_p≤ 0.1 ms, duty cycle ≤ 10%

2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.

JUNE 1993 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

12 3 4

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