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BDV65 PDF预览

BDV65

更新时间: 2024-02-17 15:43:30
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
2页 225K
描述
Silicon NPN Power Transistors

BDV65 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.19
外壳连接:COLLECTOR最大集电极电流 (IC):12 A
集电极-发射极最大电压:60 V配置:DARLINGTON
最小直流电流增益 (hFE):1000JEDEC-95代码:TO-218
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:MATTE TIN (315)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:10晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):60 MHz
Base Number Matches:1

BDV65 数据手册

 浏览型号BDV65的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Darlington Power Transistor  
BDV65/A/B/C  
DESCRIPTION  
·Collector Current -IC= 12A  
·Collector-Emitter Saturation Voltage-  
: VCE(sat)= 2.0V(Max.)@ IC= 5A  
·Complement to Type BDV64/A/B/C  
APPLICATIONS  
·Designed for audio output stages and general amplifier  
and switching applications  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
PARAMETER  
VALUE  
60  
UNIT  
BDV65  
BDV65A  
BDV65B  
BDV65C  
BDV65  
80  
Collector-Base  
Voltage  
VCBO  
V
100  
120  
60  
BDV65A  
BDV65B  
BDV65C  
80  
Collector-Emitter  
Voltage  
VCEO  
V
100  
120  
5
VEBO  
IC  
ICM  
IB  
Emitter-Base Voltage  
V
A
A
A
Collector Current-Continuous  
Collector Current-Peak  
12  
15  
Base Current-Continuous  
0.5  
Collector Power Dissipation  
@ TC=25℃  
Collector Power Dissipation  
@ Ta=25℃  
125  
3.5  
PC  
W
TJ  
Junction Temperature  
150  
-65~150  
Storage Temperature Range  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
1.0  
UNIT  
/W  
/W  
Thermal Resistance,Junction to Case  
Thermal Resistance,Junction to Ambient  
Rth j-c  
35.7  
Rth j-a  
isc Websitewww.iscsemi.cn  

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