5秒后页面跳转
BDV65B PDF预览

BDV65B

更新时间: 2024-02-28 15:44:03
品牌 Logo 应用领域
POINN 晶体晶体管放大器局域网
页数 文件大小 规格书
6页 150K
描述
NPN SILICON POWER DARLINGTONS

BDV65B 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.19
外壳连接:COLLECTOR最大集电极电流 (IC):12 A
集电极-发射极最大电压:60 V配置:DARLINGTON
最小直流电流增益 (hFE):1000JEDEC-95代码:TO-218
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:MATTE TIN (315)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:10晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):60 MHz
Base Number Matches:1

BDV65B 数据手册

 浏览型号BDV65B的Datasheet PDF文件第2页浏览型号BDV65B的Datasheet PDF文件第3页浏览型号BDV65B的Datasheet PDF文件第4页浏览型号BDV65B的Datasheet PDF文件第5页浏览型号BDV65B的Datasheet PDF文件第6页 
BDV65, BDV65A, BDV65B, BDV65C  
NPN SILICON POWER DARLINGTONS  
Copyright © 1997, Power Innovations Limited, UK  
JUNE 1993 - REVISED MARCH 1997  
Designed for Complementary Use with  
BDV64, BDV64A, BDV64B and BDV64C  
SOT-93 PACKAGE  
(TOP VIEW)  
125 W at 25°C Case Temperature  
12 A Continuous Collector Current  
B
C
E
1
2
3
Minimum h of 1000 at 4 V, 5 A  
FE  
Pin 2 is in electrical contact with the mounting base.  
MDTRAA  
absolute maximum ratings at 25°C case temperature (unless otherwise noted)  
RATING  
SYMBOL  
VALUE  
UNIT  
BDV65  
60  
BDV65A  
BDV65B  
BDV65C  
BDV65  
80  
Collector-base voltage (IE = 0)  
Collector-emitter voltage (IB = 0)  
VCBO  
V
100  
120  
60  
BDV65A  
BDV65B  
BDV65C  
80  
VCEO  
V
100  
120  
Emitter-base voltage  
VEBO  
IC  
ICM  
IB  
5
12  
V
A
Continuous collector current  
Peak collector current (see Note 1)  
Continuous base current  
15  
A
0.5  
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)  
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)  
Operating junction temperature range  
Ptot  
Ptot  
Tj  
125  
W
W
°C  
°C  
°C  
3.5  
-65 to +150  
-65 to +150  
260  
Storage temperature range  
Tstg  
TL  
Lead temperature 3.2 mm from case for 10 seconds  
NOTES: 1. This value applies for tp £ 0.1 ms, duty cycle £ 10%  
2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.  
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.  
P R O D U C T  
I N F O R M A T I O N  
Information is current as of publication date. Products conform to specifications in accordance  
with the terms of Power Innovations standard warranty. Production processing does not  
necessarily include testing of all parameters.  
1

与BDV65B相关器件

型号 品牌 获取价格 描述 数据表
BDV65B/D ETC

获取价格

Complementary Silicon Plastic Power Darlingtons
BDV65B_06 ONSEMI

获取价格

Complementary Silicon Plastic Power Darlingtons
BDV65B_08 ONSEMI

获取价格

Complementary Silicon Plastic Power Darlingtons
BDV65BG ONSEMI

获取价格

Complementary Silicon Plastic Power Darlingtons
BDV65BLEADFREE CENTRAL

获取价格

Power Bipolar Transistor, 12A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-218, Plasti
BDV65C NJSEMI

获取价格

Trans Darlington NPN 120V 12A 3-Pin(3+Tab) SOT-93
BDV65C SAVANTIC

获取价格

Silicon NPN Power Transistors
BDV65C ISC

获取价格

Silicon NPN Darlington Power Transistor
BDV65C BOURNS

获取价格

NPN SILICON POWER DARLINGTONS
BDV65C POINN

获取价格

NPN SILICON POWER DARLINGTONS