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BD244TU PDF预览

BD244TU

更新时间: 2024-11-26 21:02:59
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网开关晶体管
页数 文件大小 规格书
4页 37K
描述
Power Bipolar Transistor, 6A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

BD244TU 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:TO-220, 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.67最大集电极电流 (IC):6 A
集电极-发射极最大电压:45 V配置:SINGLE
最小直流电流增益 (hFE):15JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT APPLICABLE极性/信道类型:PNP
最大功率耗散 (Abs):65 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT APPLICABLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):3 MHzBase Number Matches:1

BD244TU 数据手册

 浏览型号BD244TU的Datasheet PDF文件第2页浏览型号BD244TU的Datasheet PDF文件第3页浏览型号BD244TU的Datasheet PDF文件第4页 
BD244/A/B/C  
Medium Power Linear and Switching  
Applications  
Complement to BD243, BD243A, BD243B and BD243C respectively  
TO-220  
1.Base 2.Collector 3.Emitter  
1
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
Collector-Base Voltage  
CBO  
: BD244  
- 45  
- 60  
- 80  
V
V
V
V
: BD244A  
: BD244B  
: BD244C  
- 100  
V
Collector-Emitter Voltage  
CEO  
: BD244  
- 45  
- 60  
- 80  
V
V
V
V
: BD244A  
: BD244B  
: BD244C  
- 100  
V
Emitter-Base Voltage  
Collector Current (DC)  
- 5  
- 6  
V
A
EBO  
I
I
I
C
*Collector Current (Pulse)  
Base Current  
- 10  
A
CP  
B
- 2  
A
P
Collector Dissipation (T =25°C)  
65  
W
°C  
°C  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 65 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max.  
Units  
V
(sus)  
* Collector-Emitter Sustaining Voltage  
CEO  
: BD244  
I = - 30mA, I = 0  
- 45  
- 60  
- 80  
V
V
V
V
C
B
: BD244A  
: BD244B  
: BD244C  
- 100  
I
Collector Cut-off Current : BD244/244A  
: BD244B/244C  
V
= - 30V, I = 0  
- 0.7  
- 0.7  
mA  
mA  
CEO  
CE  
B
V
= - 60V, I = 0  
CE  
B
I
Collector Cut-off Current : BD244  
V
= - 45V, V = 0  
= - 60V, V = 0  
= - 80V, V = 0  
BE  
- 0.4  
- 0.4  
- 0.4  
- 0.4  
mA  
mA  
mA  
mA  
CES  
CE  
BE  
: BD244A  
: BD244B  
: BD244C  
V
CE BE  
V
CE  
V
= - 100V, V = 0  
CE  
BE  
I
Emitter Cut-off Current  
* DC Current Gain  
V
= - 5V, I = 0  
- 1  
mA  
EBO  
EB  
C
h
V
= - 4V, I = - 0.3A  
30  
15  
FE  
CE  
C
V
= - 4V, I = - 3A  
C
CE  
V
(sat)  
* Collector-Emitter Saturation Voltage  
* Base-Emitter ON Voltage  
I = - 6A, I = - 1A  
- 1.5  
- 2  
V
V
CE  
C
B
V
(on)  
V
= - 4V, I = - 6A  
BE  
CE C  
* Pulse Test: PW =300µs, duty Cycle =2% Pulsed  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

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