5秒后页面跳转
BCR101L3-E6433 PDF预览

BCR101L3-E6433

更新时间: 2024-10-29 04:11:59
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体管
页数 文件大小 规格书
10页 557K
描述
Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, NPN, Silicon

BCR101L3-E6433 技术参数

生命周期:ActiveReach Compliance Code:compliant
风险等级:5.8最大集电极电流 (IC):0.05 A
最小直流电流增益 (hFE):70元件数量:1
极性/信道类型:NPN最大功率耗散 (Abs):0.25 W
子类别:BIP General Purpose Small Signal表面贴装:YES
晶体管元件材料:SILICONBase Number Matches:1

BCR101L3-E6433 数据手册

 浏览型号BCR101L3-E6433的Datasheet PDF文件第1页浏览型号BCR101L3-E6433的Datasheet PDF文件第3页浏览型号BCR101L3-E6433的Datasheet PDF文件第4页浏览型号BCR101L3-E6433的Datasheet PDF文件第5页浏览型号BCR101L3-E6433的Datasheet PDF文件第6页浏览型号BCR101L3-E6433的Datasheet PDF文件第7页 
BCR101...  
Thermal Resistance  
Parameter  
Junction - soldering point  
Symbol  
Value  
Unit  
K/W  
1)  
R
thJS  
BCR101F  
BCR101L3  
BCR101T  
90  
60  
165  
Electrical Characteristics at T = 25°C, unless otherwise specified  
A
Parameter  
Symbol  
Values  
Unit  
min.  
typ. max.  
DC Characteristics  
Collector-emitter breakdown voltage  
50  
-
-
-
V
V
V
(BR)CEO  
(BR)CBO  
CBO  
I = 100 µA, I = 0  
C
B
Collector-base breakdown voltage  
I = 10 µA, I = 0  
50  
-
-
-
-
-
C
E
Collector-base cutoff current  
= 40 V, I = 0  
I
I
100 nA  
V
CB  
E
-
75  
-
µA  
-
Emitter-base cutoff current  
EBO  
V
= 10 V, I = 0  
EB  
C
2)  
70  
DC current gain  
h
FE  
I = 5 mA, V = 5 V  
C
CE  
2)  
Collector-emitter saturation voltage  
I = 5 mA, I = 0.25 mA  
V
V
V
-
0.5  
1
-
-
-
0.3  
1.8  
3
V
CEsat  
i(off)  
C
B
Input off voltage  
I = 100 µA, V = 5 V  
C
CE  
Input on voltage  
I = 1 mA, V = 0.3 V  
i(on)  
C
CE  
Input resistor  
Resistor ratio  
R
R /R  
70  
0.9  
100  
1
130 kΩ  
1
1.1  
-
1
2
AC Characteristics  
Transition frequency  
-
-
100  
3
-
-
MHz  
pF  
f
T
I = 10 mA, V = 5 V, f = 100 MHz  
C
CE  
Collector-base capacitance  
= 10 V, f = 1 MHz  
C
cb  
V
CB  
1
2
For calculation of R  
please refer to Application Note Thermal Resistance  
thJA  
Pulse test: t < 300µs; D < 2%  
Nov-27-2003  
2

与BCR101L3-E6433相关器件

型号 品牌 获取价格 描述 数据表
BCR101T INFINEON

获取价格

NPN Silicon Digital Transistor
BCR101T-E6327 INFINEON

获取价格

Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, NPN, Silicon
BCR101T-E6433 INFINEON

获取价格

Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, NPN, Silicon
BCR103 INFINEON

获取价格

NPN Silicon Digital Transistor
BCR103-E6327 INFINEON

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon
BCR103-E6433 INFINEON

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon
BCR103F INFINEON

获取价格

NPN Silicon Digital Transistor
BCR103F-E6327 INFINEON

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon
BCR103F-E6433 INFINEON

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon
BCR103L3 INFINEON

获取价格

NPN Silicon Digital Transistor