Datasheet > BCR101L3-E6433

BCR101L3-E6433

更新时间： 2024-01-19 01:24:14

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体管
页数	文件大小	规格书
10页	557K
描述
Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, NPN, Silicon

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技术参数
数据手册

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BCR101L3-E6433 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.8	最大集电极电流 (IC)：	0.05 A
最小直流电流增益 (hFE)：	70	元件数量：	1
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.25 W
子类别：	BIP General Purpose Small Signal	表面贴装：	YES
晶体管元件材料：	SILICON	Base Number Matches：	1

BCR101L3-E6433 数据手册

BCR101...

Thermal Resistance

Parameter

Junction - soldering point

Symbol

Value

Unit

K/W

thJS

BCR101F

BCR101L3

BCR101T

≤ 90

≤ 60

≤ 165

Electrical Characteristics at T = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ. max.

DC Characteristics

Collector-emitter breakdown voltage

(BR)CEO

(BR)CBO

CBO

I = 100 µA, I = 0

Collector-base breakdown voltage

I = 10 µA, I = 0

Collector-base cutoff current

= 40 V, I = 0

100 nA

µA

Emitter-base cutoff current

EBO

= 10 V, I = 0

DC current gain

I = 5 mA, V = 5 V

Collector-emitter saturation voltage

I = 5 mA, I = 0.25 mA

0.5

0.3

1.8

CEsat

i(off)

Input off voltage

I = 100 µA, V = 5 V

Input on voltage

I = 1 mA, V = 0.3 V

i(on)

Input resistor

Resistor ratio

R /R

0.9

100

130 kΩ

1.1

AC Characteristics

Transition frequency

100

MHz

I = 10 mA, V = 5 V, f = 100 MHz

Collector-base capacitance

= 10 V, f = 1 MHz

For calculation of R

please refer to Application Note Thermal Resistance

thJA

Pulse test: t < 300µs; D < 2%

Nov-27-2003

123 4 5 6 7...10

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