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BCR108E6327 PDF预览

BCR108E6327

更新时间: 2024-11-24 19:36:55
品牌 Logo 应用领域
英飞凌 - INFINEON 开关光电二极管晶体管
页数 文件大小 规格书
11页 863K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon,

BCR108E6327 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:End Of Life包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.98其他特性:BUILT-IN BIAS RESISTOR RATIO IS 21.3636
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):70
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):170 MHz
Base Number Matches:1

BCR108E6327 数据手册

 浏览型号BCR108E6327的Datasheet PDF文件第2页浏览型号BCR108E6327的Datasheet PDF文件第3页浏览型号BCR108E6327的Datasheet PDF文件第4页浏览型号BCR108E6327的Datasheet PDF文件第5页浏览型号BCR108E6327的Datasheet PDF文件第6页浏览型号BCR108E6327的Datasheet PDF文件第7页 
BCR108...  
NPN Silicon Digital Transistor  
Switching circuit, inverter, interface circuit,  
driver circuit  
Built in bias resistor (R =2.2 k, R =47 k)  
1
2
BCR108S: Two internally isolated  
transistors with good matching  
in one multichip package  
BCR108S: For orientation in reel see  
package information below  
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
BCR108  
BCR108S  
BCR108W  
C
C1  
6
B2  
5
E2  
4
3
R2  
R1  
R1  
TR2  
TR1  
R1  
R2  
R2  
1
2
3
1
2
E1  
B1  
C2  
B
E
EHA07174  
EHA07184  
Type  
BCR108  
BCR108S  
BCR108W  
Marking  
Pin Configuration  
1=B 2=E 3=C  
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363  
Package  
SOT23  
WHs  
WHs  
WHs  
-
-
-
1=B 2=E 3=C  
-
-
-
SOT323  
2011-08-19  
1

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