是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | End Of Life | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.98 | 其他特性: | BUILT-IN BIAS RESISTOR RATIO IS 21.3636 |
最大集电极电流 (IC): | 0.1 A | 集电极-发射极最大电压: | 50 V |
配置: | SINGLE WITH BUILT-IN RESISTOR | 最小直流电流增益 (hFE): | 70 |
JESD-30 代码: | R-PDSO-G3 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 40 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 170 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BCR108E6433 | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon | |
BCR108E6433HTMA1 | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon | |
BCR108F | INFINEON |
获取价格 |
NPN Silicon Digital Transistor | |
BCR108L3 | INFINEON |
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NPN Silicon Digital Transistor | |
BCR108S | INFINEON |
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NPN Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driv | |
BCR108S-E6327 | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon | |
BCR108S-E6433 | INFINEON |
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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon | |
BCR108SH6327 | INFINEON |
获取价格 |
NPN Silicon Digital Transistor | |
BCR108SH6327XTSA1 | INFINEON |
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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, ROHS CO | |
BCR108SH6433 | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, ROHS CO |