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BCR101L3-E6433 PDF预览

BCR101L3-E6433

更新时间: 2024-01-12 16:46:11
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体管
页数 文件大小 规格书
10页 557K
描述
Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, NPN, Silicon

BCR101L3-E6433 技术参数

生命周期:ActiveReach Compliance Code:compliant
风险等级:5.8最大集电极电流 (IC):0.05 A
最小直流电流增益 (hFE):70元件数量:1
极性/信道类型:NPN最大功率耗散 (Abs):0.25 W
子类别:BIP General Purpose Small Signal表面贴装:YES
晶体管元件材料:SILICONBase Number Matches:1

BCR101L3-E6433 数据手册

 浏览型号BCR101L3-E6433的Datasheet PDF文件第1页浏览型号BCR101L3-E6433的Datasheet PDF文件第2页浏览型号BCR101L3-E6433的Datasheet PDF文件第4页浏览型号BCR101L3-E6433的Datasheet PDF文件第5页浏览型号BCR101L3-E6433的Datasheet PDF文件第6页浏览型号BCR101L3-E6433的Datasheet PDF文件第7页 
BCR101...  
DC current gain h = ƒ(I )  
Collector-emitter saturation voltage  
FE  
C
V
= 5 V (common emitter configuration)  
V
= ƒ(I ), h = 20  
CE  
CEsat C FE  
10 3  
10 -1  
A
10 -2  
10 -3  
10 -4  
10 2  
10 1  
10 -4  
10 -3  
10 -2  
10 -1  
0
0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4  
0.5  
A
V
I
V
CEsat  
C
Input on Voltage Vi  
= ƒ(I )  
Input off voltage V  
= ƒ(I )  
i(off) C  
(on)  
C
V
= 0.3V (common emitter configuration)  
V
= 5V (common emitter configuration)  
CE  
CE  
10 -1  
10 -2  
A
A
10 -2  
10 -3  
10 -4  
10 -5  
10 -3  
10 -4  
10 -5  
10 -6  
10 -1  
10 0  
10 1  
10 2  
0.5  
1
1.5  
2
2.5  
3
4
V
V
V
V
i(off)  
i(on)  
Nov-27-2003  
3

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