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BCR108F PDF预览

BCR108F

更新时间: 2024-11-23 22:27:23
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
10页 492K
描述
NPN Silicon Digital Transistor

BCR108F 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-F3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.69Is Samacsys:N
其他特性:BUILT-IN BIAS RESISTOR RATIO IS 21.36最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):70JESD-30 代码:R-PDSO-F3
湿度敏感等级:1元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.25 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):170 MHz
Base Number Matches:1

BCR108F 数据手册

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BCR108.../SEMH10  
NPN Silicon Digital Transistor  
Switching circuit, inverter, interface circuit,  
driver circuit  
Built in bias resistor (R =2.2k, R =47k)  
1
2
For 6-PIN packages: two (galvanic) internal  
isolated transistors with good matching  
in one package  
BCR108/F/L3  
BCR108T/W  
BCR108S  
SEMH10  
C
C1  
B2  
E2  
3
6
5
4
R2  
R1  
R1  
TR2  
TR1  
R1  
R2  
R2  
1
2
3
1
2
E1  
B1  
C2  
B
E
EHA07174  
EHA07184  
Type  
Marking  
Pin Configuration  
Package  
BCR108  
WHs  
WHs  
WH  
WHs  
WHs  
WHs  
WH  
1=B 2=E 3=C  
1=B 2=E 3=C  
1=B 2=E 3=C  
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363  
1=B 2=E 3=C  
1=B 2=E 3=C  
-
-
-
-
-
-
-
-
-
SOT23  
TSFP-3  
TSLP-3-4  
BCR108F  
BCR108L3  
BCR108S  
BCR108T  
BCR108W  
SEMH10  
-
-
-
-
-
-
SC75  
SOT323  
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666  
Jun-14-2004  
1

BCR108F 替代型号

型号 品牌 替代类型 描述 数据表
BCR108W INFINEON

类似代替

NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver cir
BCR108S INFINEON

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NPN Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driv
RN1905FE TOSHIBA

功能相似

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

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