生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G6 |
Reach Compliance Code: | compliant | 风险等级: | 5.84 |
其他特性: | BUILT-IN BIAS RESISTOR RATIO IS 21.36 | 最大集电极电流 (IC): | 0.1 A |
集电极-发射极最大电压: | 50 V | 配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE): | 70 | JESD-30 代码: | R-PDSO-G6 |
元件数量: | 2 | 端子数量: | 6 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
参考标准: | AEC-Q101 | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 170 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BCR108SH6433XTMA1 | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, ROHS CO | |
BCR108SQ62702C2414 | INFINEON |
获取价格 |
TRANSISTOR DIGITAL SOT363 | |
BCR108T | INFINEON |
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NPN Silicon Digital Transistor | |
BCR108TE6327 | INFINEON |
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NPN Silicon Digital Transistor | |
BCR108W | INFINEON |
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NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver cir | |
BCR108WE6327 | ROCHESTER |
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100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR | |
BCR108WE6327HTSA1 | INFINEON |
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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon | |
BCR108WE6433 | INFINEON |
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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon | |
BCR108WH6433 | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS CO | |
BCR108WH6433XTMA1 | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS CO |