生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.42 |
Is Samacsys: | N | 其他特性: | BUILT-IN BIAS RESISTOR RATIO IS 21.3636 |
最大集电极电流 (IC): | 0.1 A | 集电极-发射极最大电压: | 50 V |
配置: | SINGLE WITH BUILT-IN RESISTOR | 最小直流电流增益 (hFE): | 70 |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
功耗环境最大值: | 0.25 W | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 170 MHz |
VCEsat-Max: | 0.3 V | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
BCR108TE6327 | INFINEON | NPN Silicon Digital Transistor |
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BCR108W | INFINEON | NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver cir |
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BCR108WE6327 | ROCHESTER | 100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR |
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BCR108WE6327HTSA1 | INFINEON | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon |
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BCR108WE6433 | INFINEON | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon |
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BCR108WH6433 | INFINEON | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS CO |
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