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BCR108WH6433XTMA1 PDF预览

BCR108WH6433XTMA1

更新时间: 2024-11-24 20:37:31
品牌 Logo 应用领域
英飞凌 - INFINEON 开关光电二极管晶体管
页数 文件大小 规格书
12页 211K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT PACKAGE-3

BCR108WH6433XTMA1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:End Of Life包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.75其他特性:BUILT-IN BIAS RESISTOR RATIO IS 21.36
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):70
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
参考标准:AEC-Q101表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):170 MHz
Base Number Matches:1

BCR108WH6433XTMA1 数据手册

 浏览型号BCR108WH6433XTMA1的Datasheet PDF文件第2页浏览型号BCR108WH6433XTMA1的Datasheet PDF文件第3页浏览型号BCR108WH6433XTMA1的Datasheet PDF文件第4页浏览型号BCR108WH6433XTMA1的Datasheet PDF文件第5页浏览型号BCR108WH6433XTMA1的Datasheet PDF文件第6页浏览型号BCR108WH6433XTMA1的Datasheet PDF文件第7页 
BCR108...  
NPN Silicon Digital Transistor  
Switching circuit, inverter, interface circuit,  
driver circuit  
Built in bias resistor (R =2.2 k, R =47 k)  
1
2
BCR108S: Two internally isolated  
transistors with good matching  
in one multichip package  
BCR108S: For orientation in reel see  
package information below  
1)  
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
BCR108/F  
BCR108S  
BCR108T/W  
C
C1  
6
B2  
5
E2  
4
3
R2  
R1  
R1  
TR2  
TR1  
R1  
R2  
R2  
1
2
3
1
2
E1  
B1  
C2  
B
E
EHA07174  
EHA07184  
Type  
BCR108  
BCR108F  
BCR108S  
BCR108W  
Marking  
Pin Configuration  
Package  
SOT23  
TSFP-3  
WHs  
WHs  
WHs  
WHs  
1=B 2=E 3=C  
1=B 2=E 3=C  
-
-
-
-
-
-
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363  
1=B 2=E 3=C  
-
-
-
SOT323  
1Pb-containing package may be available upon special request  
2007-07-24  
1

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