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BCR10CS PDF预览

BCR10CS

更新时间: 2024-02-24 10:28:37
品牌 Logo 应用领域
POWEREX 局域网
页数 文件大小 规格书
5页 89K
描述
MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

BCR10CS 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.42其他特性:BUILT-IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):30
JESD-30 代码:R-PDSO-G6元件数量:2
端子数量:6最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN AND PNP
功耗环境最大值:0.25 W认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):130 MHz
VCEsat-Max:0.3 VBase Number Matches:1

BCR10CS 数据手册

 浏览型号BCR10CS的Datasheet PDF文件第2页浏览型号BCR10CS的Datasheet PDF文件第3页浏览型号BCR10CS的Datasheet PDF文件第4页浏览型号BCR10CS的Datasheet PDF文件第5页 
MITSUBISHI SEMICONDUCTOR TRIAC  
BCR10CS  
MEDIUM POWER USE  
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE  
Dimensions  
BCR10CS  
OUTLINE DRAWING  
in mm  
4
10.5 MAX  
4.5  
1.3  
TYPE  
NAME  
+0.3  
–0  
0
VOLTAGE  
CLASS  
1
5
0.5  
0.8  
1
2 3  
Measurement  
point of case  
temperature  
2 4  
T
1
TERMINAL  
TERMINAL  
1
2
3
4
T2  
• IT (RMS) ...................................................................... 10A  
• VDRM ..............................................................400V/600V  
• IFGT !, IRGT !, IRGT # ......................... 30mA (20mA)  
GATE TERMINAL  
TERMINAL  
3
1
T
2
5  
TO-220S  
APPLICATION  
Solid state relay, hybrid IC  
MAXIMUM RATINGS  
Voltage class  
Symbol  
Parameter  
Unit  
8
12  
1  
VDRM  
VDSM  
Repetitive peak off-state voltage  
400  
500  
600  
720  
V
V
1  
Non-repetitive peak off-state voltage  
Symbol  
Parameter  
RMS on-state current  
Surge on-state current  
Conditions  
Ratings  
10  
Unit  
A
IT (RMS)  
ITSM  
Commercial frequency, sine full wave 360° conduction, Tc=103°C  
60Hz sinewave 1 full cycle, peak value, non-repetitive  
100  
A
Value corresponding to 1 cycle of half wave 60Hz, surge on-state  
current  
2
2
2
I t  
I t for fusing  
41.6  
A s  
PGM  
PG (AV)  
VGM  
IGM  
Peak gate power dissipation  
Average gate power dissipation  
Peak gate voltage  
5
0.5  
10  
2
W
W
V
Peak gate current  
A
Tj  
Junction temperature  
Storage temperature  
Weight  
–40 ~ +125  
–40 ~ +125  
1.2  
°C  
°C  
g
Tstg  
Typical value  
1. Gate open.  
Feb.1999  

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