Datasheet > BCR10CS

BCR10CS

更新时间： 2024-11-23 22:48:15

品牌	Logo	应用领域
POWEREX		局域网
页数	文件大小	规格书
5页	89K
描述
MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

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中文翻译

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数据手册

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BCR10CS 数据手册

MITSUBISHI SEMICONDUCTOR TRIAC

BCR10CS

MEDIUM POWER USE

NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

Dimensions

BCR10CS

OUTLINE DRAWING

in mm

10.5 MAX

4.5

1.3

TYPE

NAME

+0.3

–0

VOLTAGE

CLASS

0.5

0.8

2 3

Measurement

point of case

temperature

2 4

TERMINAL

• IT (RMS) ...................................................................... 10A

• VDRM ..............................................................400V/600V

• IFGT !, IRGT !, IRGT # ......................... 30mA (20mA)

GATE TERMINAL

TERMINAL

✽5

TO-220S

APPLICATION

Solid state relay, hybrid IC

MAXIMUM RATINGS

Voltage class

Symbol

Parameter

Unit

✽1

VDRM

VDSM

Repetitive peak off-state voltage

400

500

600

720

✽1

Non-repetitive peak off-state voltage

Symbol

Parameter

RMS on-state current

Surge on-state current

Conditions

Ratings

Unit

IT (RMS)

ITSM

Commercial frequency, sine full wave 360° conduction, Tc=103°C

60Hz sinewave 1 full cycle, peak value, non-repetitive

100

Value corresponding to 1 cycle of half wave 60Hz, surge on-state

current

I t

I t for fusing

41.6

A s

PGM

PG (AV)

VGM

IGM

Peak gate power dissipation

Average gate power dissipation

Peak gate voltage

0.5

Peak gate current

Junction temperature

Storage temperature

Weight

–40 ~ +125

1.2

°C

Tstg

—

Typical value

✽1. Gate open.

Feb.1999

12 3 4 5

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