Datasheet > BCR10CS-12LB-T11B00

BCR10CS-12LB-T11B00

更新时间： 2022-10-15 10:04:28

品牌	Logo	应用领域
瑞萨 - RENESAS		可控硅
页数	文件大小	规格书
9页	137K
描述
Triac Medium Power Use

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Preliminary Datasheet

BCR10CS-12LB

Triac

R07DS0224EJ0400

(Previous: REJ03G0469-0300)

Rev.4.00

Medium Power Use

Dec 14, 2010

Features



I_{T (RMS)}: 10 A

_DRM: 600 V

_FGTI, I_RGTI, I_{RGT III}: 30 mA (20 mA)^Note6



The product guaranteed maximum junction

temperature of 150°C

Non-Insulated Type

Planar Passivation Type



Outline

RENESAS Package code: PRSS0004AE-B

(Package name: LDPAK(S)-(1) )

RENESAS Package code: PRSS0004AB-A

(Package name: TO-220S)

2, 4

1. T₁Terminal

2. T₂Terminal

3. Gate Terminal

4. T₂Terminal

Applications

Contactless AC switch, light dimmer, electronic flasher unit, control of household equipment such as TV sets, stereo

systems, refrigerator, washing machine, infrared kotatsu, carpet, electric fan, solenoid driver, small motor control, solid

state relay, copying machine, electric tool, electric heater control, and other general purpose control applications

Maximum Ratings

Voltage class

Parameter

Symbol

Unit

Repetitive peak off-state voltage^Note1

Non-repetitive peak off-state voltage^Note1

V_DRM

V_DSM

600

720

Parameter

Symbol

Ratings

Unit

Conditions

RMS on-state current

I_{T (RMS)}

I_TSM

I²t

Commercial frequency, sine full wave

360° conduction, Tc = 128C^Note3

Surge on-state current

I²t for fusing

100

41.6

60Hz sinewave 1 full cycle, peak value,

non-repetitive

A²s

Value corresponding to 1 cycle of half

wave 60Hz, surge on-state current

Peak gate power dissipation

Average gate power dissipation

Peak gate voltage

P_GM

P_{G (AV)}

V_GM

I_GM

0.5

Peak gate current

Junction temperature

Storage temperature

Mass

– 40 to +150

1.3

C

Tstg

—

Typical value

Notes: 1. Gate open.

R07DS0224EJ0400 Rev.4.00

Dec 14, 2010

Page 1 of 8

12 3 4 5 6 7...9

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