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BCR10CS-8L PDF预览

BCR10CS-8L

更新时间: 2024-11-24 18:20:51
品牌 Logo 应用领域
三菱 - MITSUBISHI 三端双向交流开关栅极
页数 文件大小 规格书
5页 86K
描述
TRIAC, 400V V(DRM), 10A I(T)RMS

BCR10CS-8L 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.84外壳连接:MAIN TERMINAL 2
配置:SINGLE换向电压的临界上升率-最小值:10 V/us
最大直流栅极触发电流:30 mA最大直流栅极触发电压:1.5 V
JESD-30 代码:R-PSSO-G2最大漏电流:2 mA
元件数量:1端子数量:2
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE认证状态:Not Qualified
最大均方根通态电流:10 A断态重复峰值电压:400 V
子类别:TRIACs表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
触发设备类型:TRIACBase Number Matches:1

BCR10CS-8L 数据手册

 浏览型号BCR10CS-8L的Datasheet PDF文件第2页浏览型号BCR10CS-8L的Datasheet PDF文件第3页浏览型号BCR10CS-8L的Datasheet PDF文件第4页浏览型号BCR10CS-8L的Datasheet PDF文件第5页 
MITSUBISHI SEMICONDUCTOR TRIAC  
BCR10CS  
MEDIUM POWER USE  
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE  
Dimensions  
BCR10CS  
OUTLINE DRAWING  
in mm  
4
10.5 MAX  
4.5  
1.3  
TYPE  
NAME  
+0.3  
–0  
0
VOLTAGE  
CLASS  
1
5
0.5  
0.8  
1
2 3  
Measurement  
point of case  
temperature  
2 4  
T
1
TERMINAL  
TERMINAL  
1
2
3
4
T2  
• IT (RMS) ...................................................................... 10A  
• VDRM ..............................................................400V/600V  
• IFGT !, IRGT !, IRGT # ......................... 30mA (20mA)  
GATE TERMINAL  
TERMINAL  
3
1
T
2
5  
TO-220S  
APPLICATION  
Solid state relay, hybrid IC  
MAXIMUM RATINGS  
Voltage class  
Symbol  
Parameter  
Unit  
8
12  
1  
VDRM  
VDSM  
Repetitive peak off-state voltage  
400  
500  
600  
720  
V
V
1  
Non-repetitive peak off-state voltage  
Symbol  
Parameter  
RMS on-state current  
Surge on-state current  
Conditions  
Ratings  
10  
Unit  
A
IT (RMS)  
ITSM  
Commercial frequency, sine full wave 360° conduction, Tc=103°C  
60Hz sinewave 1 full cycle, peak value, non-repetitive  
100  
A
Value corresponding to 1 cycle of half wave 60Hz, surge on-state  
current  
2
2
2
I t  
I t for fusing  
41.6  
A s  
PGM  
PG (AV)  
VGM  
IGM  
Peak gate power dissipation  
Average gate power dissipation  
Peak gate voltage  
5
0.5  
10  
2
W
W
V
Peak gate current  
A
Tj  
Junction temperature  
Storage temperature  
Weight  
–40 ~ +125  
–40 ~ +125  
1.2  
°C  
°C  
g
Tstg  
Typical value  
1. Gate open.  
Feb.1999  

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