Datasheet > BCR10LM-16LH-1-B00

BCR10LM-16LH-1-B00

更新时间： 2022-10-15 10:04:17

品牌	Logo	应用领域
瑞萨 - RENESAS		可控硅
页数	文件大小	规格书
8页	118K
描述
Triac Medium Power Use

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Preliminary Datasheet

BCR10LM-16LH

R07DS0319EJ0100

Rev.1.00

Triac

Medium Power Use

May 18, 2011

Features

•

I_{T (RMS)}: 10 A

_DRM: 800 V

_FGTI, I_RGTI, I_{RGT III}: 50 mA or 35 mA (I_GTitem:1)

High Commutation

_iso: 1800 V

•

The Product guaranteed maximum junction

temperature 150°C

Planar Type

Insulated Type

UL Recognized : File No. E223904

•

Outline

RENESAS Package code: PRSS0003AF-A

(Package name: TO-220FL)

1. T₁Terminal

2. T₂Terminal

3. Gate Terminal

Applications

Switching mode power supply, motor control, heater control, and other general purpose AC power control applications

Maximum Ratings

Voltage class

Parameter

Symbol

Unit

Repetitive peak off-state voltage^Note1

Non-repetitive peak off-state voltage^Note1

Notes: 1. Gate open.

V_DRM

V_DSM

800

960

Parameter

Symbol

Ratings

Unit

Conditions

RMS on-state current

I_{T (RMS)}

I_TSM

I²t

Commercial frequency, sine full wave

360°conduction, Tc = 103°C ^Note3

60 Hz sinewave 1 full cycle, peak value,

non-repetitive

Surge on-state current

I²t for fusion

100

41.6

A²s

Value corresponding to 1 cycle of half

wave 60 Hz, surge on-state current

Peak gate power dissipation

Average gate power dissipation

Peak gate voltage

P_GM

P_{G (AV)}

V_GM

I_GM

0.5

Peak gate current

Junction Temperature

Storage temperature

Mass

–40 to +150

1.5

°C

Tstg

—

Typical value

Isolation voltage

V_iso

1800

Ta = 25°C, AC 1 minute,

T₁• T₂• G terminal to case

R07DS0319EJ0100 Rev.1.00

May 18, 2011

Page 1 of 7

12 3 4 5 6 7 8

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