Datasheet > BCR10LM-16LH-1-B00

BCR10LM-16LH-1-B00

更新时间： 2022-10-15 10:04:17

品牌	Logo	应用领域
瑞萨 - RENESAS		可控硅
页数	文件大小	规格书
8页	118K
描述
Triac Medium Power Use

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BCR10LM-16LH-1-B00 数据手册

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BCR10LM-16LH

Preliminary

Electrical Characteristics

BCR10LM-16LH-1

BCR10LM-16LH

Parameter

Symbol

Unit

Test conditions

(I_GTitem : 1)

Min.

Typ. Max. Min. Typ. Max.

Tj = 150°C

V_DRMapplied

Repetitive peak off-state current

On-state voltage

I_DRM

V_TM

—

2.0

1.5

—

2.0

1.5

Tc = 25°C, I_TM= 15 A

instantaneous

—

measurement

Gate trigger voltage^Note2

Gate trigger curent^Note2

ΙΙ

ΙΙΙ

V_FGT

—

1.5

—

1.5

Tj = 25°C, V_D= 6 V

R_L= 6 Ω, R_G= 330 Ω

V_RGT

ΙΙΙ

Tj = 25°C, V_D= 6 V

R_L= 6 Ω, R_G= 330 Ω

I_FGT

I_RGT

ΙΙ

ΙΙΙ

I_RGT

ΙΙΙ

Tj = 125°C

Gate non-trigger voltage

V_GD

0.2

—

0.2

—

V_D= 1/2 V_DRM

Tj = 150°C

0.1

—

0.1

—

V_D= 1/2 V_DRM

Junction to case^Note3

4.1 °C/W

Thermal resistance

R_{th (j-c)}

—

4.1

—

Tj = 125°C

A/ms

Critical-rate of decay of on-state (di/dt)c

commutating current ^Note4

—

(dv/dt)c < 100 V/μs

Notes: 2. Measurement using the gate trigger characteristics measurement circuit.

3. The contact thermal resistance R_{th (c-f)}in case of greasing is 0.5°C/W.

4. Test conditions of the critical-rate of decay of on-state commutation current are shown in the table below.

Test conditions

Commutating voltage and current waveforms

(inductive load)

1. Junction temperature

Time

Supply Voltage

Tj = 125°C

2. Peak off-state voltage

V_D= 400 V

(di/dt)c

Time

Main Current

Main Voltage

2. Rate of rise of off-state commutating voltage

(dv/dt)c < 100 V/μs

(dv/dt)c

R07DS0319EJ0100 Rev.1.00

May 18, 2011

Page 2 of 7

123 4 5 6 7 8

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